TITLE

Transport mechanisms in atomic-layer-deposited Al2O3 dielectrics

AUTHOR(S)
Specht, M.; Städele, M.; Jakschik, S.; Schröder, U.
PUB. DATE
April 2004
SOURCE
Applied Physics Letters;4/19/2004, Vol. 84 Issue 16, p3076
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We analyze the field and temperature dependence of electron currents through atomic-layer-deposited thin (3.6–6 nm) sheets of Al2O3 which were annealed above the crystallization temperature. On the basis of electrical characterization and numerical simulation that includes trap-assisted transport as well as the band bending in the contact regions, we have identified three characteristic field regions in which the currents are dominated by elastic trap-assisted tunneling, Frenkel–Poole hopping, or Fowler–Nordheim tunneling. We find that the Frenkel–Poole traps lie in a narrow band about 1.2 eV below the conduction band minimum of Al2O3, whereas the energetic distribution of the elastic traps is broad and has a tail that reaches far into the band gap. The numerical results are compatible with a Si/Al2O3 conduction band offset of 2.7 eV. © 2004 American Institute of Physics.
ACCESSION #
12817083

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics