TITLE

Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy

AUTHOR(S)
Aarts, I. M. P.; Hoex, B.; Smets, A. H. M.; Engeln, R.; Kessels, W. M. M.; van de Sanden, M. C. M.
PUB. DATE
April 2004
SOURCE
Applied Physics Letters;4/19/2004, Vol. 84 Issue 16, p3079
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Cavity ringdown spectroscopy has been applied to hydrogenated amorphous silicon (a-Si:H) showing that this fully optical method is suited for the detection of defect-related absorption in thin films with a minimal detectable absorption of 1×10-6 per laser pulse and without the need for a calibration procedure. Absolute absorption coefficient spectra for photon energies between 0.7 and 1.7 eV have been obtained for thin a-Si:H films (4–98 nm) revealing a different spectral dependence for defects located in the bulk and in the surface/interface region of a-Si:H. © 2004 American Institute of Physics.
ACCESSION #
12817082

 

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