Heteroepitaxial growth of (111) 3C–SiC on well-lattice-matched (110) Si substrates by chemical vapor deposition

Nishiguchi, Taro; Nakamura, Mitsuhiro; Nishio, Koji; Isshiki, Toshiyuki; Nishino, Shigehiro
April 2004
Applied Physics Letters;4/19/2004, Vol. 84 Issue 16, p3082
Academic Journal
Heteroepitaxial growth of 3C–SiC on (110) Si substrates by chemical vapor deposition was carried out, and the grown epitaxial layers were investigated by high resolution transmission electron microscopic (HRTEM) analysis. The interface structure between 3C–SiC and Si substrates depended on the flow rate of C3H8 during the carbonization process. In the case of the growth under C3H8=0.4 sccm, the interface was flat and 3C–SiC layer was grown epitaxially on (110) Si substrate in a well-lattice-matched relationship of (110) Si//(111) 3C–SiC and [110] Si//[110] 3C–SiC. In contrast, the interface was rough under C3H8=1.2 sccm and polycrystalline 3C–SiC grew without epitaxial relationship to the substrate. HRTEM observations revealed that an atomically flat (110) Si substrate surface is significant in order to grow high quality 3C–SiC with suppressing the generation of stacking faults. © 2004 American Institute of Physics.


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