Polarization retention in Pb(Zr0.4Ti0.6)O3 capacitors with IrO2 top electrodes

Kang, B. S.; Kim, D. J.; Jo, J. Y.; Noh, T. W.; Jong-Gul Yoon; Song, T. K.; Lee, Y. K.; Lee, J. K.; Shin, S.; Park, Y. S.
April 2004
Applied Physics Letters;4/19/2004, Vol. 84 Issue 16, p3127
Academic Journal
The retention characteristics of Ir/IrO2/Pb(Zr0.4Ti0.6)O3(PZT)/Pt/IrO2 capacitors were investigated by measuring the switching and nonswitching polarizations, the switching current profiles, and the P–V hysteresis loops. The retention losses of Ir/IrO2/PZT/Pt/IrO2 capacitors were compared with those of the Pt/PZT/Pt capacitors, and a significant improvement of an opposite-state retention was observed. It was found that the growth and the relaxation behaviors of the internal field are quite similar for both capacitors, but that the polarization backswitching becomes significantly smaller for the PZT capacitors with the IrO2 top electrodes. The difference in polarization backswitching might originate from the nature of the ferroelectric/electrode interfaces, possibly suppressing the nucleation of opposite domains at the interfaces. © 2004 American Institute of Physics.


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