Polarization switching of submicron ferroelectric capacitors using an atomic force microscope

Prasertchoung, S.; Nagarajan, V.; Ma, Z.; Ramesh, R.; Cross, J. S.; Tsukada, M.
April 2004
Applied Physics Letters;4/19/2004, Vol. 84 Issue 16, p3130
Academic Journal
We report on the measurement of switchable pulse polarization of micron and submicron ferroelectric capacitors contacted using an atomic force microscope. Fast square pulses with rise time on the order of tens of nanoseconds are used to obtain the switchable polarization (ΔP) of discrete polycrystalline Pb(ZrTi)O3 capacitors of 21.5, 0.69, and 0.19 μm2 prepared by sputtering and reactive ion etching. Our studies show that the switching characteristics of these capacitors are well behaved, indicating that high-speed and high-density ferroelectric memory capacitors are not limited by scaling down the capacitor area. © 2004 American Institute of Physics.


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