TITLE

Dielectric nonlinear characteristics of Ba(Zr0.35Ti0.65)O3 thin films grown by a sol-gel process

AUTHOR(S)
Jiwei Zhai, Karl; Xi Yao; Liangying Zhang; Bo Shen
PUB. DATE
April 2004
SOURCE
Applied Physics Letters;4/19/2004, Vol. 84 Issue 16, p3136
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ba(Zr0.35Ti0.65)O3 (BZT) thin films were deposited via a sol-gel process on Pt-coated silicon substrates. The BZT films were in the perovskite phase and had polycrystalline structure. Temperature-dependent dielectric measurements revealed that the thin films have relaxor behavior and diffuse phase transition characteristics. The tunability K of the dielectric constant (at 600 kV/cm) is about 40% in the temperature range of 179–293 K. The improved temperature stability from this BZT thin film is beneficial to applications requiring a wide range of operating temperatures, thereby eliminating the need for environmental controls. Although the K value is not extraordinarily large compared to (Ba,Sr)TiO3, the low dielectric constant of BZT is attractive for microwave frequency applications. This provides an additional possibility in balancing K and dielectric constant through materials engineering for optimum device performance. © 2004 American Institute of Physics.
ACCESSION #
12817063

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics