TITLE

Possibility of a metallic field-effect transistor

AUTHOR(S)
Rotkin, Slava V.; Hess, Karl
PUB. DATE
April 2004
SOURCE
Applied Physics Letters;4/19/2004, Vol. 84 Issue 16, p3139
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We develop theoretical arguments that demonstrate the possibility of metallic field-effect transistors in one-dimensional systems and particularly in armchair carbon nanotubes. A very inhomogeneous electric field, such as the field of a tunneling tip, can penetrate the relatively weakly screened nanotubes and open an energy gap. As a consequence, an energy barrier forms that impedes electron flow and thus permits transistor action. This type of metallic field effect is advantageous because of the high conductance of the metallic tubes in the ON state. © 2004 American Institute of Physics.
ACCESSION #
12817062

 

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