TITLE

Nanoscale electrical characterization of trap-assisted quasibreakdown fluctuations in SiO2

AUTHOR(S)
Pakes, C. I.; Ramelow, S.; Prawer, S.; Jamieson, D. N.
PUB. DATE
April 2004
SOURCE
Applied Physics Letters;4/19/2004, Vol. 84 Issue 16, p3142
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Conductive atomic force microscopy has been used to electrically image quasibreakdown sites in thin, native SiO2 films. Local current–voltage spectroscopy reveals, at individual sites, fluctuations in the breakdown current between well-defined conductivity states. Theoretical modeling has been performed to show that conduction through the film is governed by local trap-assisted tunneling, with typically one or two charge traps contributing to conduction through a quasibreakdown site. Our study provides a semiquantitative analysis to characterize the effective trap states that give rise to local random telegraph signals in the oxide film. © 2004 American Institute of Physics.
ACCESSION #
12817061

 

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