TITLE

Metal-nanoparticle single-electron transistors fabricated using electromigration

AUTHOR(S)
Bolotin, K. I.; Kuemmeth, F.; Pasupathy, A. N.; Ralph, D. C.
PUB. DATE
April 2004
SOURCE
Applied Physics Letters;4/19/2004, Vol. 84 Issue 16, p3154
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have fabricated single-electron transistors from individual metal nanoparticles using a geometry that provides improved coupling between the particle and the gate electrode. This is accomplished by incorporating a nanoparticle into a gap created between two electrodes using electromigration, all on top of an oxidized aluminum gate. We achieve sufficient gate coupling to access more than ten charge states of individual gold nanoparticles (5–15 nm in diameter). The devices are sufficiently stable to permit spectroscopic studies of the electron-in-a-box level spectra within the nanoparticle as its charge state is varied. © 2004 American Institute of Physics.
ACCESSION #
12817057

 

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