TITLE

Diagnostics of doping integrity in n+/p/n+ transistor-channel structure by scanning nonlinear dielectric microscopy

AUTHOR(S)
Matsukawa, Takashi; Yasumuro, Chiaki; Masahara, Meishoku; Tanoue, Hisao; Kanemaru, Seigo
PUB. DATE
April 2004
SOURCE
Applied Physics Letters;4/19/2004, Vol. 84 Issue 16, p3169
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Scanning nonlinear dielectric microscopy was used to diagnose doping integrity in a transistor channel. The carrier state at various points in a pn junction was defined as n-type, p-type, or depletion through nonlinear capacitance (dC/dV) profiling and pinpoint capacitance–voltage analysis. Carrier state analysis was applied to the n+/p/n+ transistor channel of structures with different process parameters. An increase in the n+ activation temperature from 800 to 950 °C caused shrinkage in channel length of the p-type region. Decreasing the substrate acceptor concentration from 1018 to 1017 cm-3 caused depletion of the entire channel when the gate length was less than 200 nm. © 2004 American Institute of Physics.
ACCESSION #
12817052

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics