TITLE

Extension of Coulomb blockade region by quantum confinement in the ultrasmall silicon dot in a single-hole transistor at room temperature

AUTHOR(S)
Saitoh, Masumi; Hiramoto, Toshiro
PUB. DATE
April 2004
SOURCE
Applied Physics Letters;4/19/2004, Vol. 84 Issue 16, p3172
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
First room-temperature (RT) observation of extended Coulomb blockade (CB) region due to quantum confinement in the ultrasmall silicon dot in a single-hole transistor (SHT) is described. We fabricate single-dot SHTs in the form of metal-oxide-semiconductor field-effect transistors with an extremely constricted channel. Both large CB oscillation with the peak-to-valley current ratio (PVCR) of 40.4 and clear negative differential conductance (NDC) with the PVCR of 11.8 (highest ever reported) are observed at RT in the fabricated device. The observed NDC is attributable to the resonant tunneling due to the large quantum level spacing in the ultrasmall dot whose size is estimated to be about 2 nm. © 2004 American Institute of Physics.
ACCESSION #
12817051

 

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