Band alignment at the i-ZnO/CdS interface in Cu(In,Ga)(S,Se)2 thin-film solar cells

Weinhardt, L.; Heske, C.; Umbach, E.; Niesen, T. P.; Visbeck, S.; Karg, F.
April 2004
Applied Physics Letters;4/19/2004, Vol. 84 Issue 16, p3175
Academic Journal
The interface between the i-ZnO layer and the CdS buffer in Cu(In,Ga)(S,Se)2 thin-film solar cells from the Shell Solar baseline process has been investigated using ultraviolet- and x-ray photoelectron spectroscopy and inverse photoemission. Combining both techniques, a direct determination of the conduction and valence band offsets at the interface is possible. Different from existing models, we find a flat conduction band alignment (i.e., a conduction band offset of 0.10±0.15 eV), ∼0.5 eV above the Fermi level, and a valence band offset of 0.96±0.15 eV. © 2004 American Institute of Physics.


Related Articles

  • Conduction band offset at GeO2/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies. Zhang, W. F.; Nishimula, T.; Nagashio, K.; Kita, K.; Toriumi, A. // Applied Physics Letters;3/11/2013, Vol. 102 Issue 10, p102106 

    We report a consistent conduction band offset (CBO) at a GeO2/Ge interface determined by internal photoemission spectroscopy (IPE) and charge-corrected X-ray photoelectron spectroscopy (XPS). IPE results showed that the CBO value was larger than 1.5 eV irrespective of metal electrode and...

  • Conduction band offset of HfO2 on GaAs. Seguini, G.; Perego, M.; Spiga, S.; Fanciulli, M.; Dimoulas, A. // Applied Physics Letters;11/5/2007, Vol. 91 Issue 19, p192902 

    A detailed analysis of the band alignment between molecular beam deposited amorphous HfO2 and GaAs is reported. The conduction band offset, measured by internal photoemission (IPE), is 1.9±0.2 eV. The valence band offset (VBO) is probed by x-ray photoelectron spectroscopy (XPS). The accurate...

  • CdS annealing treatments in various atmospheres and effects on performances of CdTe/CdS solar cells. Jun-feng, Han; Gan-hua, Fu; Krishnakumar, V.; Cheng, Liao; Jaegermann, Wolfram // Journal of Materials Science: Materials in Electronics;Aug2013, Vol. 24 Issue 8, p2695 

    In this work, a systematic research on CdS annealing treatments under various atmospheres had been done to understand their effects on CdS/CdTe solar cells. CdS films were prepared by a standard CBD method and annealed under various atmospheres, including Ar, Ar+H, O, Ar+S and Ar+CdCl....

  • Spectroscopic evaluation of band alignment of atomic layer deposited BeO on Si(100). Lei, Ming; Yum, J. H.; Price, J.; Hudnall, Todd W.; Bielawski, C. W.; Banerjee, S. K.; Lysaght, P. S.; Bersuker, G.; Downer, M. C. // Applied Physics Letters;3/19/2012, Vol. 100 Issue 12, p122906 

    We report optical characterization of the conduction band offset (CBO) between atomic-layer-deposited single crystal BeO and Si using internal photoemission (IPE) and internal multi-photon photoemission (IMPE), and of the valence band offset (VBO) using synchrotron x-ray photoelectron...

  • Effects of thermal annealing on the band alignment of lanthanum aluminate on silicon investigated by x-ray photoelectron spectroscopy. Liu, Z. Q.; Chiam, S. Y.; Chim, W. K.; Pan, J. S.; Ng, C. M. // Journal of Applied Physics;Nov2009, Vol. 106 Issue 10, p103718-1 

    In this work, we investigate the changes in the band offsets of lanthanum aluminate on silicon after postdeposition annealing at 600 and 800 °C by x-ray photoelectron spectroscopy (XPS). It is found that annealing at 800 °C reduces the conduction band offset from 2.31 to 1.39±0.2 eV. A...

  • Direct determination of the band alignment at the (Zn,Mg)O/CISSe interface. Erfurth, F.; Grimm, A.; Palm, J.; Niesen, T. P.; Reinert, F.; Weinhardt, L.; Umbach, E. // Applied Physics Letters;4/4/2011, Vol. 98 Issue 14, p142107 

    The electronic and chemical properties of the (Zn1-x,Mgx)O/CuIn(S,Se)2 interface, prepared by sputtering of thin (Zn,Mg)O layers, were investigated with direct and inverse photoelectron spectroscopy on in situ prepared samples. With the combination of both techniques we have determined the band...

  • Valence band offset of ZnO/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy. Jia, C. H.; Chen, Y. H.; Zhou, X. L.; Yang, A. L.; Zheng, G. L.; Liu, X. L.; Yang, S. Y.; Wang, Z. G. // Applied Physics A: Materials Science & Processing;May2010, Vol. 99 Issue 2, p511 

    X-ray photoelectron spectroscopy has been used to measure the valence band offset of the ZnO/BaTiO3 heterojunction grown by metal-organic chemical vapor deposition. The valence band offset (VBO) is determined to be 0.48±0.09 eV, and the conduction band offset (CBO) is deduced to be about 0.75...

  • Site occupancy and cation binding states in reduced polycrystalline SrxBa1-xNb2O6. Dandeneau, Christopher S.; YiHsun Yang; Krueger, Benjamin W.; Olmstead, Marjorie A.; Bordia, Rajendra K.; Ohuchi, Fumio S. // Applied Physics Letters;3/10/2014, Vol. 104 Issue 10, p1 

    Site occupancy and cation binding states in the proposed thermoelectric n-type oxide SrxBa1-xNb2O6 (SBN100x) were investigated using X-ray photoelectron spectroscopy (XPS). Sr 3d XPS spectra from unreduced polycrystalline SBN100x with various compositions contained two distinct spin-orbit...

  • Intermixing at the heterointerface between ZnS/Zn(S,O) bilayer buffer and CuInS2 thin film solar cell absorber. Bär, M.; Ennaoui, A.; Klaer, J.; Kropp, T.; Sáez-Araoz, R.; Lehmann, S.; Grimm, A.; Lauermann, I.; Loreck, Ch.; Sokoll, St.; Schock, H.-W.; Fischer, Ch.-H.; Lux-Steiner, M. C.; Jung, Ch. // Journal of Applied Physics;9/15/2006, Vol. 100 Issue 6, p064911 

    The application of Zn compounds as buffer layers was recently extended to wide-gap CuInS2 (CIS) based thin-film solar cells. Using an alternative chemical deposition route for the buffer preparation aiming at the deposition of a single-layer, nominal ZnS buffer without the need for any toxic...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics