Coulomb oscillations based on band-to-band tunneling in a degenerately doped silicon metal-oxide-semiconductor field-effect transistor

Kyung Rok Kim; Dae Hwan Kim; Jong Duk Lee; Byung-Gook Park
April 2004
Applied Physics Letters;4/19/2004, Vol. 84 Issue 16, p3178
Academic Journal
We report Coulomb oscillations based on band-to-band tunneling through a valence band in silicon metal-oxide-semiconductor field-effect transistors. Degenerately p+-doped channel and n+-doped source/drain enables band-to-band tunneling, which can play a major role in the transport between the channel and source/drain. The formation of tunnel barriers and a quantum dot in a single-electron transistor structure originates from two p+–n+ tunnel junctions and a p+-doped channel with mesoscopic dimension, respectively. Coulomb-blockade oscillations with multiple peaks were clearly observed at liquid nitrogen temperature. Using the electrical and thermal characterization of the quantum dot, single-electron charging effect based on band-to-band tunneling is confirmed. © 2004 American Institute of Physics.


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