Amorphization of silicon by femtosecond laser pulses

Jia, Jimmy; Ming Li; Thompson, Carl V.
April 2004
Applied Physics Letters;4/19/2004, Vol. 84 Issue 16, p3205
Academic Journal
We have used femtosecond laser pulses to drill submicron holes in single crystal silicon films in silicon-on-insulator structures. Cross-sectional transmission electron microscopy and energy dispersive x-ray analysis of material adjacent to the ablated holes indicates the formation of a layer of amorphous Si. This demonstrates that even when material is ablated using femtosecond pulses near the single pulse ablation threshold, sufficient heating of the surrounding material occurs to create a molten zone which solidifies so rapidly that crystallization is bypassed. © 2004 American Institute of Physics.


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