TITLE

Activation mechanism of annealed Mg-doped GaN in air

AUTHOR(S)
Lin, Yow-Jon
PUB. DATE
April 2004
SOURCE
Applied Physics Letters;4/12/2004, Vol. 84 Issue 15, p2760
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this study, the activation mechanism of annealed Mg-doped GaN in air and the influence of ambient on activation of Mg-doped GaN were investigated. According to the experimental results, we found that the dissociation of MgGa–H, and the formation of hydrogenated gallium vacancies (VGaH2) and gallium vacancies occupied by interstitial Mg during the air-activation process, led to an increase in the hole concentration. In addition, from the observed photoluminescence results and the secondary ion mass spectroscopy measurements, it is suggested that the formation of VGaH2 will result in an enhancement of hydrogen desorption from the MgGa–H complexes. © 2004 American Institute of Physics.
ACCESSION #
12754145

 

Related Articles

  • Thermal conversion of n-type GaAs:Si to p type in excess arsenic vapor. Ky, Nguyen Hong; Pavesi, L.; Araújo, D.; Ganière, J. D.; Reinhart, F. K. // Journal of Applied Physics;10/1/1991, Vol. 70 Issue 7, p3887 

    Deals with a study which performed the thermal conversion of n-type silicon-doped gallium arsenide into p type. Comparison between the photoluminescence spectra of annealed samples; Analysis of depth profile of the photoluminescence spectra; Role of gallium vacancies and gallium vacancy-silicon...

  • Influence of Si doping on optical characteristics of cubic GaN grown on (001) GaAs substrates. Li, Z. Q.; Li, Z.Q.; Chen, H.; Liu, H. F.; Liu, H.F.; Wan, L.; Zhang, M. H.; Zhang, M.H.; Huang, Q.; Zhou, J. M.; Zhou, J.M.; Yang, N.; Tao, K.; Han, Y. J.; Han, Y.J.; Luo, Y. // Applied Physics Letters;6/19/2000, Vol. 76 Issue 25 

    The photoluminescence (PL) properties of Si-doped cubic GaN with different carrier concentrations were investigated at room temperature. The epilayers were grown on GaAs (001) by radio-frequency molecular-beam epitaxy. It was found that when the carrier concentration is increased from 5x10[sup...

  • Substrate effect on the room-temperature ferromagnetism in un-doped ZnO films. Zhan, Peng; Wang, Weipeng; Xie, Zheng; Li, Zhengcao; Zhang, Zhengjun; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong // Applied Physics Letters;7/16/2012, Vol. 101 Issue 3, p031913 

    Room-temperature ferromagnetism was achieved in un-doped ZnO films on silicon and quartz substrates. Photoluminescence measurement and positron annihilation analysis suggested that the ferromagnetism was originated from singly occupied oxygen vacancies (roughly estimated as ∼0.55...

  • Microstructure changes after annealing of undoped and Cr-doped liquid-encapsulated Czochralski-grown GaAs. Visser, E. P.; Weyher, J. L.; Giling, L. J. // Journal of Applied Physics;4/15/1991, Vol. 69 Issue 8, p4234 

    Investigates the microstructure changes after annealing of undoped and chromium-doped liquid-encapsulated Czochralski gallium arsenide crystals. Evaluation on the near-band-gap photoluminescence intensities; Homogeneity of post-growth heat treatments; Characterization methods for the study.

  • A positron annihilation study of defects in neutron transmutation-doped float-zone (Ar)-Si. Puff, Werner; Meng, Xiang-ti // Journal of Applied Physics;1/15/1993, Vol. 73 Issue 2, p648 

    Presents a study on the annealing of defects introduced by neutron transmutation doping of float-zone silicon through positron lifetime spectroscopy and Doppler-broadening measurements. Analysis of the spectra with two significant lifetime components; Reasons behind the main defects; Effect of...

  • Structure and photoluminescence of ZnGa2Se4:Eu2+. Georgobiani, A. N.; Tagiev, B. G.; Guseinov, G. G.; Kerimova, T. G.; Tagiev, O. B.; Asadullaeva, S. G. // Inorganic Materials;May2010, Vol. 46 Issue 5, p456 

    The structure of undoped and europium-doped ZnGa2Se4 has been studied, and the interplanar spacings, the Miller indices of the observed reflections, and their relative intensities have been determined. The photoluminescence spectra of ZnGa2Se4 and ZnGa2Se4:Eu2+ crystals have been measured at...

  • A simple method for reconstructing the density of states of heavily doped silicon from photoluminescence spectra. Pan, Y. // Journal of Applied Physics;7/15/1991, Vol. 70 Issue 2, p838 

    Presents a method for reconstructing the density of states of heavily doped silicon from low and room-temperature photoluminescence spectra. Reconstruction procedures; Results; Conclusions.

  • Enhanced exciton photoluminescence in the selectively Si-doped GaAs/AlxGa1-xAs heterostructures. Kundrotas, J.; Čerškus, A.; Nargelienė, V.; Sužiedėlis, A.; Ašmontas, S.; Gradauskas, J.; Johannessen, A.; Johannessen, E.; Umansky, V. // Journal of Applied Physics;Oct2010, Vol. 108 Issue 6, p063522 

    Experimental results examining the photoluminescence spectra of selectively Si-doped GaAs/AlxGa1-xAs heterostructures is presented. Possible mechanisms of carrier recombination are discussed with a special emphasis on the peculiarities of excitonic photoluminescence. Strong intensity lines in...

  • The Edge Ultraviolet Luminescence of GaN:Zn Films Activated in a Nitrogen Plasma. Georgobiani, A. N.; Gruzintsev, A. N.; Aminov, U. A.; Vorob’ev, M. O.; Khodos, I. I. // Semiconductors;Feb2001, Vol. 35 Issue 2, p144 

    The effect of annealing in nitrogen plasma on the photoluminescence and photoconductivity spectra, conduction type, and the surface morphology of gallium nitride films doped with zinc was studied. Emergence of intense ultraviolet edge emission peaking at a wavelength of 376 nm was observed after...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics