Directed nanostructural evolution in Ti0.8Ce0.2N layers grown as a function of low-energy, high-flux ion irradiation

Lee, T.-Y.; Kodambaka, S.; Wen, J. G.; Twesten, R. D.; Greene, J. E.; Petrov, I.
April 2004
Applied Physics Letters;4/12/2004, Vol. 84 Issue 15, p2796
Academic Journal
We use a combination of alloying and low-energy ion irradiation during film growth to controllably manipulate the nanostructure of TiN-based layers. Ti0.8Ce0.2N films are grown on SiO2 at 350 °C using UHV reactive magnetron sputtering in N2. The N2+-to-metal ratio incident at the growing film is maintained constant at 15, while the ion energy EN2+ is varied from 14 to 45 eV. Films grown with EN2+=14 eV consist of equiaxed nanograins with an average size of 2.0 nm, while layers deposited with EN2+=45 eV exhibit a 2-nm-wide nanocolumnar structure. In both cases, the films are dense, atomically smooth, and have strong 002 texture with low stress. This is in dramatic contrast to TiN films deposited under the same conditions, which are underdense with extremely rough surfaces and consist of broad (≃ 30 nm) columns. We attribute the formation of controlled nanostructures to the interplay between ion-irradiation-induced effects and thermally driven Ce surface segregation, leading to continuous renucleation during film growth. © 2004 American Institute of Physics.


Related Articles

  • Stress field in a crack on the interface of materials irradiated with SH-waves. Kurylyak, D.; Nazarchyk, Z.; Voitko, M. // Materials Science;Jul2007, Vol. 43 Issue 4, p464 

    On the basis of the solution of the problem of diffraction of a field of plane SH-waves on a crack located on the interface of materials obtained by the authors earlier, we deduce asymptotic expressions for the stress intensity factors at the crack tips. The dependences of the stress intensity...

  • Size-effect of Kondo scattering in point contacts (revisited).  // Low Temperature Physics;Jul98, Vol. 24 Issue 7, p495 

    Examines the size-effect of Kondo scattering effect in nanometer-sized metallic point contacts. Use of mechanically-controlled break-junction technique for Copper-Manganese alloy of different Manganese concentrations; Observation for contacts with sizes smaller than 10 nanometer; Shape of size...

  • Enhanced exchange bias in IrMn/CoFe deposited on self-organized hexagonally patterned nanodots. Li, W. J.; Shi, D. W.; Greene, Peter K.; Javed, K.; Kai Liu; Han, X. F. // Applied Physics Letters;2/11/2015, Vol. 106 Issue 7, p1 

    Exchange biased nanostructures of IrMn/CoFe were deposited on anodized alumina with hexagonally patterned nanodot surface structures. Nanodots with diameters of 20, 70, and 100 nm were fabricated to investigate the size effect on the magnetic properties. Magnetometry and the first-order reversal...

  • Growth, physical properties, and adhesion of copper-polyphenylquinoxaline interfaces. Pireaux, J. J.; Grégoire, Ch.; Bellard, L.; Cros, A.; Torres, J.; Palleau, J.; Templier, F.; Nechstchein, J.; Lazare, S. // Journal of Applied Physics;7/15/1994, Vol. 76 Issue 2, p1244 

    Investigates the physicochemical surface properties of polyphenylquinoxaline (PPQ) and of copper-PPQ interfaces. Chemical formula of PPQ; Description of the experiments; Virgin PPQ surface characterization; Discussion on ultraviolet-treated PPQ surface characterization.

  • High-intensity laser-induced vaporization without internal superheating. Beckett, P. M. // Journal of Applied Physics;10/15/1985, Vol. 58 Issue 8, p2943 

    Addresses the problem of superheating in an infinite solid. Determination of the movement of the interface; Details of the quasi-steady solution; Advantages of inserting a mushy zone between the fully solid and the fully molten phases.

  • Suppression of interface reaction and modification of band offset by Sb interlayers in CdS/InP (110) heterojunctions. Maierhofer, Ch.; Zahn, D. R. T.; Evans, D. A.; Horn, K. // Journal of Applied Physics;4/15/1993, Vol. 73 Issue 8, p4089 

    Presents information on a study that found that the deposition of monatomic interlayers at the interface between CdS and InP efficiently suppresses the interface reaction characteristics for the system and has marked influence on the valence-band offset. Research method; Results and discussion...

  • Study of interface states and oxide quality to avoid contrast reversal in scanning capacitance microscopy. Goghero, Didier; Raineri, Vito; Giannazzo, Filippo // Applied Physics Letters;9/2/2002, Vol. 81 Issue 10, p1824 

    We demonstrate that the contrast reversal effect in scanning capacitance microscopy (SCM) is related to the Si/SiO[sub 2] interface microroughness. The surface roughness has been associated with the concentration of states at the Si/SiO[sub 2] interface and a monotonic behavior of the SCM...

  • Detection of Weak Interface Signals for Same Material Bond/Weld Inspection. Rinker, B. A.; Jamieson, E. E.; Samayoa, J. A.; Abeln, T. G.; Lerch, T. P.; Neal, S. P. // AIP Conference Proceedings;2003, Vol. 657 Issue 1, p1080 

    In same material joining processes, remnants of the original interface may be acoustically weak and difficult to detect ultrasonically in the presence of grain noise. For the nearly perfect (but potentially inadequate) bond or weld the remaining interface may be defined only by small voids,...

  • Interface-enabled defect reduction in He ion irradiated metallic multilayers. Zhang, X.; Fu, E. G.; Misra, A.; Demkowicz, M. J. // JOM: The Journal of The Minerals, Metals & Materials Society (TM;Dec2010, Vol. 62 Issue 12, p75 

    Metallic multilayers are good model systems to explore the effects of heterophase interfaces in reducing radiation damage in structural materials. We summarize recent studies on radiation damage in immiscible face-centered cubic/body-centered cubic metallic multilayers, in particular Cu/V and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics