TITLE

Strain relaxation and its effect in exciton resonance energies of epitaxial ZnO layers grown on 6H-SiC substrates

AUTHOR(S)
Ashrafi, A. B. M. Almamun; Binh, Naguyen Thanh; Zhang, Bao-ping; Segawa, Yusaburo
PUB. DATE
April 2004
SOURCE
Applied Physics Letters;4/12/2004, Vol. 84 Issue 15, p2814
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thickness-dependent strain relaxation and its role on exciton resonance energies of epitaxial ZnO layers grown on 6H-SiC substrates have been studied. The magnitudes of strain were determined experimentally by x-ray diffraction measurements. The strain ratios under biaxial stresses (Δc/c0)/(Δa/a0) of epitaxial ZnO layers grown on SiC and Al2O3 substrates were estimated to be 0.38 and 0.50, respectively. The strain-induced band shift δEA/δ[variant_greek_epsilon]zz for ZnO/SiC and ZnO/Al2O3 heterostructures was analyzed by photoluminescence with the values of 13.1 and 14.6 eV, respectively. These comparative strain-induced band shifts, as well as Poisson ratios, evidenced the role of lattice deformation kinetics induced by different lattice mismatches in the ZnO/SiC and ZnO/Al2O3 heterostructures. © 2004 American Institute of Physics.
ACCESSION #
12754127

 

Related Articles

  • Band gap creation using quasiordered structures based on sonic crystals. Romero-García, V.; Fuster, E.; García-Raffi, L. M.; Sánchez-Pérez, E. A.; Sopena, M.; Llinares, J.; Sánchez-Pérez, J. V. // Applied Physics Letters;4/24/2006, Vol. 88 Issue 17, p174104 

    It is well known that sonic crystals are periodic structures that present acoustic band gaps attenuation centered at frequencies related with the lattice constant of the structure. We present an approach based on genetic algorithms to create band gaps in a predetermined range of frequencies. The...

  • X-ray and photoluminescence characterization of low temperature AlInAs grown by molecular beam.... Metzger, R.A.; McCray, L.G. // Applied Physics Letters;11/2/1992, Vol. 61 Issue 18, p2196 

    Examines the growth of AlInAs lattice matched to InP by molecular beam epitaxy on high a temperature. Characterization of AlInAs lattice by x-ray diffraction and photoluminescence; Exhibition of no shifting in the x-ray diffraction peak; Increase of photoluminescence intensity; Observation of...

  • Magnitude of the piezoelectric field in (111)B InyGa1-yAs strained-layer quantum wells. Moise, T. S.; Guido, L. J.; Barker, R. C. // Journal of Applied Physics;10/1/1993, Vol. 74 Issue 7, p4681 

    Investigates the magnitude of the piezoelectric field in (111)B In[suby]Ga[sub1-y]As strained-layer quantum wells. Relationship between the magnitude of the piezoelectric field and the degree of lattice constant mismatch; Quantum well heterostructure design; Reason for the employment of...

  • Picosecond time-resolved x-ray diffraction probe of coherent lattice dynamics (abstract) (invited). Reis, D. A.; DeCamp, M. F.; Bucksbaum, P. H.; Clarke, R.; Dufresne, E.; Merlin, R. // Review of Scientific Instruments;Mar2002, Vol. 73 Issue 3, p1361 

    The short pulses of hard x rays from synchrotron and laser based sources are sensitive probes of lattice dynamics on an ultrafast time scale. Using pump–probe time-resolved x-ray diffraction, we are able to follow the propagation of a picosecond coherent acoustic pulse in an ultrafast...

  • Lattice Dynamics of Corundum Crystals with Vacancies in Various Charge States. Kislov, A.N.; Mazurenko, V.G.; Korzov, K.N.; Kortov, V.S. // Physics of the Solid State;Sep2003, Vol. 45 Issue 9, p1780 

    The lattice dynamics of an α-Al[sub 2]O[sub 3] crystal with vacancies in various charge states is simulated using the recursive method in the shell model. The frequencies of resonant vibrations induced by defects in various directions are calculated. Characteristic features in vibrational...

  • X-ray photoelectron diffraction study of YbAs/GaAs(001) and ScAs/GaAs(001) heterostructures. Lépine, B.; Quémerais, A.; Sébilleau, D.; Jézéquel, G.; Agliz, D.; Ballini, Y.; Guivarc’h, A. // Journal of Applied Physics;11/1/1994, Vol. 76 Issue 9, p5218 

    Describes the polar angle distributions of core level photoemission intensities recorded on YbAs/GaAs(001) and ScAs/GaAs(001) heterostructures. Advantages of the photoelectron diffraction method; Morphology of thin epitaxial layers; Description of the surface crystallinity of YbAs and ScAs...

  • Comparative studies of compressibility between nanocrystalline and bulk nickel. Zhang, Jianzhong; Zhao, Yusheng; Palosz, Bogdan // Applied Physics Letters;1/22/2007, Vol. 90 Issue 4, p043112 

    The authors conducted a comparative study of compressibility between nanocrystalline and bulk nickel using synchrotron x-ray diffraction at pressures up to 7.4 GPa. Their results present a clear evidence of elastic softening in nanocrystalline Ni as compared with the bulk nickel. It is also...

  • Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy. Soshnikov, I. P.; Kryzhanovskaya, N. V.; Ledentsov, N. N.; Egorov, A. Yu.; Mamutin, V. V.; Odnoblyudov, V. A.; Ustinov, V. M.; Gorbenko, O. M.; Kirmse, H.; Neumann, W.; Bimberg, D. // Semiconductors;Mar2004, Vol. 38 Issue 3, p340 

    Results obtained in a study of the structural and optical properties of GaAs-based heterostructures with InAs quantum dot layers overgrown with InGaAsN quantum wells are presented. Transmission electron microscopy has been applied to analyze how the thickness of the InGaAsN layer and the content...

  • Oxidation-enhanced interdiffusion in Si1-xGex/Si1-yGey superlattices. Ozguven, Nevran; McIntyre, Paul C. // Applied Physics Letters;2/19/2007, Vol. 90 Issue 8, p082109 

    The effects of Si surface oxidation on Si–Ge interdiffusion in epitaxial heterostructures are presented. Single crystal Si1-xGex/Si1-yGey superlattices, with a nominal Ge composition of 8.5 at. %, were grown by low-pressure chemical vapor deposition onto Si (001) substrates. An epitaxial...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics