Narrow photoluminescence linewidth (<17 meV) from highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metalorganic chemical vapor deposition

Yang, Tao; Tatebayashi, Jun; Tsukamoto, Shiro; Nishioka, Masao; Arakawa, Yasuhiko
April 2004
Applied Physics Letters;4/12/2004, Vol. 84 Issue 15, p2817
Academic Journal
We report highly uniform self-assembled InAs quantum dots (QDs) emitting at 1.3 μm, grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition. By optimizing the InAs growth rate and capping the QDs with GaAs using triethylgallium as a gallium source, we have achieved a narrow photoluminescence (PL) inhomogeneous linewidth of 16.5 meV (at 7 K) from QDs with a density of 1.7×1010 cm-2. Furthermore, we show by temperature-dependent PL measurements that the QDs exhibit almost no dependence of linewidth on temperature due to their high uniformity. © 2004 American Institute of Physics.


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