TITLE

InAs/GaP/InGaP high-temperature power Schottky rectifier

AUTHOR(S)
Chen, A.; Woodall, J. M.
PUB. DATE
April 2004
SOURCE
Applied Physics Letters;4/12/2004, Vol. 84 Issue 15, p2844
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An InAs/GaP/InGaP rectifier has been fabricated using a semiconductor-semiconductor “Schottky” junction to utilize the thermal stability of the semiconductor-semiconductor interface. The InAs/GaP/InGaP system demonstrates rectifying characteristics with an ideality factor of 2.3 and a current–voltage extracted barrier height of 0.96 eV. It exhibits low reverse bias leakage current and achieves breakdown electric field of 0.6 MV/cm. The InAs/GaP/InGaP system maintains the rectifying characteristics up to 600 °C. Further improvement of the thermal stability is expected to be achieved by reducing the diffusion of Si dopant atoms across the InAs/GaP interface at high temperature. © 2004 American Institute of Physics.
ACCESSION #
12754117

 

Related Articles

  • Defect-related local-electric-field impact on p-n junction parameters. Czerwinski, A. // Applied Physics Letters;12/20/1999, Vol. 75 Issue 25, p3971 

    Presents a study that proposed a method to accurately determine the electric-field impact of a p-n junction. Separation of the generation current component from the total leakage current; Correction for the reverse-bias dependent diffusion current; Sources of the electrical-field enhancement.

  • Electron-beam-induced current images of sectioned p/n junctions in silicon: Influence of surface states at low acceleration voltages. Kuhnert, Reinhard // Journal of Applied Physics;7/1/1991, Vol. 70 Issue 1, p476 

    Presents a study that analyzed the electron-beam-induced current images of sectioned p/n junctions in silicon semiconductor devices. Methodology; Analysis of the potential distribution and electric field in the semiconductor device; Influence of surface states on the electron-beam-induced...

  • Direct experimental determination of voltage across high-low junctions. Daud, T.; Lindholm, F. A. // Journal of Applied Physics;1/1/1986, Vol. 59 Issue 1, p285 

    Presents a study which described a direct experimental determination of voltage across high-low (HL) semiconductor junctions. Theoretical treatments of the HL junction; Methods; Results.

  • A study of excess current in an Esaki junction. Chakraborty, P. K.; Biswas, J. C. // Journal of Applied Physics;12/1/1988, Vol. 64 Issue 11, p6357 

    Presents a study that evaluated the excess current in an Esaki semiconductor junction. Analysis of the property of the p-n junction under biasing condition; Determination of the tunnel transmission probability rate; Discussion on the expression for the excess tunneling current.

  • Properties of CdS/ZnCdTe heterojunctions. Peters, Michael G.; Fahrenbruch, Alan L.; Bube, Richard H. // Journal of Applied Physics;9/15/1988, Vol. 64 Issue 6, p3106 

    Analyzes the junction properties of CdS/ZnCdTe heterojunctions. Details on the experiment; Effect of substrate temperature for CdS deposition; Information on the current transport mechanism in CdS/Zn[sub0.3]Cd[sub0.7]Te junctions.

  • Piezoelectric mechanism for the orientation of stripe structures in two-dimensional electron systems. Fil, D. V.; Fil, D.V. // Low Temperature Physics;Aug2000, Vol. 26 Issue 8 

    A piezoelectric mechanism for the orientation of stripes in two-dimensional electron systems in GaAs-AlGaAs heterostructures is considered. It is shown that when the anisotropy of the elastic constants and the influence of the boundary of the sample are taken into account, the theory gives an...

  • Generation-recombination phenomena in almost ideal silicon p-n junctions. Cerofolini, G. F.; Polignano, M. L. // Journal of Applied Physics;12/1/1988, Vol. 64 Issue 11, p6349 

    Presents a study that examined the static current-voltage characteristics at variable temperature of almost ideal p-n silicon semiconductor junctions. Background on the generation-recombination phenomena; Analysis of the forward current of the junction; Evaluation of the reverse current of the...

  • Modeling the cutoff frequency of single-heterojunction bipolar transistors subjected to high collector-layer current. Liou, J. J.; Lindholm, F. A.; Wu, B. S. // Journal of Applied Physics;6/1/1990, Vol. 67 Issue 11, p7125 

    Presents a study which developed a model based on analytical expressions that describe the reduction of the cutoff of heterojunction bipolar transistors due to high current densities in the collector layer. Advantages of using compound-semiconductor heterojunction bipolar transistors;...

  • Erratum: "Photocurrent mapping with submicron resolution on the silicon-electrolyte junction by using near-field optics" [J. Appl. Phys. 89, 3328 (2001)]. Diesinger, Heinrich; Bsiesy, Ahmad; Hérino, Roland; Huant, Serge // Journal of Applied Physics;5/15/2001, Vol. 89 Issue 10, p5801 

    Reports on the correction made to a publication error related to the photocurrent mapping with submicron resolution on the silicon-electrolyte junction using near-field optics.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics