Phosphorus ion implantation and POCl3 doping effects of n+-polycrystalline-silicon/high-k gate dielectric (HfO2 and Al2O3) films

Chihoon Lee, Dietrich; Jihoon Choi, Dietrich; Moonju Cho, Dietrich; Doo Seok Jeong, Dietrich; Cheol Seong Hwang; Hyeong Joon Kim
April 2004
Applied Physics Letters;4/12/2004, Vol. 84 Issue 15, p2868
Academic Journal
Phosphorus (P)-doped polycrystalline-silicon gate/HfO2 or HfO2–Al2O3/p-type Si (100) metal–oxide–semiconductor capacitors were fabricated using either a POCl3 diffusion or an ion implantation technique to investigate the relationship between P penetration and the electrical properties of the high-k gate dielectric stacks. The HfO2–Al2O3 bilayer showed higher P diffusion blocking properties as a result of the 4.1-nm-thick amorphous interface layer including Al2O3 (or Al-silicate). The P ion-implanted sample with the HfO2–Al2O3 bilayer sample had the smallest leakage current density of -8.8×10-10 A/cm2 at -1 V, which was due to the lower P penetration, and the higher trap depth of approximately 1.3±0.02 eV compared to 0.9±0.02 eV of the sample with only HfO2. However, the P doping by POCl3 diffusion was too excessive and only very leaky devices were produced. © 2004 American Institute of Physics.


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