Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data

Martinelli, Lucio; Marzegalli, A.; Raiteri, P.; Bollani, M.; Montalenti, F.; Miglio, Leo; Chrastina, D.; Isella, G.; von Känel, H.
April 2004
Applied Physics Letters;4/12/2004, Vol. 84 Issue 15, p2895
Academic Journal
Molecular dynamics simulations with the Tersoff potential of the strain distribution around 60° misfit dislocation in a heteroepitaxial SiGe film confirm that highly compressed and expanded, cylindrical nanometer-sized regions appear on opposite sides of the (111) glide plane. Such a configuration is suggested to generate opposite chemical potential gradients for Si and Ge diffusion and, as verified by a Monte Carlo simulation, in the formation of Si-rich and Ge-rich nanowires along the dislocation core. This model is supported by photoluminescence measurements as a function of annealing temperature and time. © 2004 American Institute of Physics.


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