TITLE

InP/InGaAs heterojunction bipolar transistors with low-resistance contact on heavily doped InP emitter layer

AUTHOR(S)
Moonjung Kim, B. D.; Choul-Young Kim, B. D.; Young-Se Kwon
PUB. DATE
April 2004
SOURCE
Applied Physics Letters;4/12/2004, Vol. 84 Issue 15, p2934
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
InP/InGaAs heterojunction bipolar transistors (HBTs) with low-resistance Ti/Pt/Au contact directly on heavily doped InP emitter layer have been demonstrated. A specific contact resistance of Ti/Pt/Au to n-type InP with doping concentration of 2×1019 cm-3 was investigated with the tunneling model theoretically and transmission line model (TLM) experimentally, revealing that it depends greatly on the doping level. TLM measurements exhibited a low specific contact resistance of 3.5×10-7 Ω cm2, which can be applicable to the fabrication of HBTs. InP/InGaAs HBTs with n+-InP emitter layer have been demonstrated with excellent dc characteristics, including a low offset voltage of 0.12 V, a knee voltage of 0.5 V, and a current gain of 28. These results verify that the heavily doped InP emitter layer allows a low-resistance contact. © 2004 American Institute of Physics.
ACCESSION #
12754087

 

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