The Role of the AIGaAs Doping Level on the Optical Gain of Two-Dimensional Electron Gas Photodetectors

Nabet, Bahram; Romero, Murilo A.; Cola, Adriano; Quaranta, Fabio
February 2004
Journal of Electronic Materials;Feb2004, Vol. 33 Issue 2, p123
Academic Journal
We compare the optical response of two modulation-doped heterojunction photodetectors with identical growth structure, differing only in the doping level of the wide band material. The larger photoresponse of the higher doped device cannot be explained as photoconductive gain because neither the transit time nor the recombination lifetimes are substantially altered by the change in doping. Alternatively, we propose to explain the results on the basis of an optical gating effect. It is shown that proper control of the two-dimensional electron gas (2-DEG) channel population in dark conditions allows one to optimize optical responsivity and external quantum efficiency.


Related Articles

  • Optically induced transport properties of freely suspended semiconductor submicron channels. Rossler, C.; Hof, K.-D.; Manus, S.; Ludwig, S.; Kotthaus, J. P.; Simon, J.; Holleitner, A. W.; Schuh, D.; Wegscheider, W. // Applied Physics Letters;8/18/2008, Vol. 93 Issue 7, p071107 

    We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas. The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of...

  • Effect of Doping and Post Annealing on PbI2 Photoconductivity. Mousa, Ali Moutesher; Jamil, Shatha Shamoon; Ponpon, Jean Pieer // Journal of Materials Science & Engineering A;2012, Vol. 2 Issue 2, p215 

    This paper proposed a study on the fabrication and characterization of photo detectors based on PbI2 layer deposited from solution. The characteristics of dark and photocurrent of the detectors were investigated. Particular attention has been given to the question of layer thickness, impurities...

  • 20 μm cutoff heterojunction interfacial work function internal photoemission detectors. Matsik, S.G.; Rinzan, M.B.M.; Esaev, D.G.; Perera, A.G.U.; Liu, H.C.; Buchanan, M. // Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3435 

    Results are reported on Heterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) detectors designed for operation up to 20 μm. The peak response of 100 mA/W at 12.5 μm with a D* of 2×1011 Jones was observed with a cutoff wavelength of ∼20 μm. The BLIP temperature...

  • Absorption and Photoconductivity of Boron-Compensated μc-Si:H. Kazanskiı, A. G.; Mell, H.; Terukov, E. I.; Forsh, P. A. // Semiconductors;Mar2000, Vol. 34 Issue 3, p367 

    A study is reported of absorption, conductivity, and photoconductivity of photosensitive μc-Si:H weakly doped with boron. The dependences of photoconductivity on the temperature and the intensity of light were measured in a temperature range of 100-400 K for photon energies of 0.9, 1.3, and...

  • Very high two-dimensional electron gas concentrations with enhanced mobilities in selectively.... Shieh, H.M.; Hsu, W.C.; Wu, C.L. // Applied Physics Letters;7/26/1993, Vol. 63 Issue 4, p509 

    Develops a type of pseudomorphic single quantum well heterostructures by selectively double-delta-doping gallium arsenide layers on side of indium gallium arsenide channel. Growth by low-pressure metalorganic chemical vapor deposition; Determination of two-dimensional electron gas content and...

  • Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors. Uren, Michael J.; Cäsar, Markus; Gajda, Mark A.; Kuball, Martin // Applied Physics Letters;6/30/2014, Vol. 104 Issue 26, p1 

    Temperature dependent pulsed and ramped substrate bias measurements are used to develop a detailed understanding of the vertical carrier transport in the buffer layers in a carbon doped GaN power heterojunction field effect transistor. Carbon doped GaN and multiple layers of AlGaN alloy are used...

  • Photoconductive response of PbTe doping superlattices. Jantsch, W.; Lischka, K.; Eisenbeiss, A.; Pichler, P.; Clemens, H.; Bauer, G. // Applied Physics Letters;6/8/1987, Vol. 50 Issue 23, p1654 

    Doping superlattices made of PbTe exhibit excellent photoconductive response with a peak detectivity D*≥8×1010 cm Hz1/2 W-1, which is close to the theoretical limit at 6 μm wavelength. Lifetime and far-infrared magneto-optical investigations show that photogenerated electron-hole...

  • Photoelectric Properties of ZnO Films Doped with Cu and Ag Acceptor Impurities. Gruzintsev, A. N.; Volkov, V. T.; Yakimov, E. E. // Semiconductors;Mar2003, Vol. 37 Issue 3, p259 

    The influence exerted by doping with Cu and Ag acceptor impurities at a content of 1, 3, and 5 at. % on the luminescence and photoconductivity of zinc oxide films has been studied. Electron-beam evaporation in optimal modes has been used to obtain films with predominant luminescence in the UV...

  • Magnetron-sputtered amorphous silicon. Demichelis, F.; Tagliaferro, A.; Tresso, E.; Rava, P. // Journal of Applied Physics;6/15/1985, Vol. 57 Issue 12, p5424 

    Presents the results obtained on several SP undoped αSi:H films deposited at different temperatures of the substrate. Occurrence of the highest photoconductivity; Example of a transparent conductive film; Instrument used to measure the transmittance and reflectance spectra of the films.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics