TITLE

1.31 μm InGaAs quantum dot light-emitting diodes grown directly in a GaAs matrix by metalorganic chemical-vapor deposition

AUTHOR(S)
Todaro, M. T.; De Giorgi, M.; Tasco, V.; De Vittorio, M.; Cingolani, R.; Passaseo, A.
PUB. DATE
April 2004
SOURCE
Applied Physics Letters;4/5/2004, Vol. 84 Issue 14, p2482
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigate the optical properties of light-emitting diodes (LEDs) operating at 1.3 μm embedding, in the intrinsic region, quantum dots (QDs) directly grown by metalorganic chemical-vapor deposition in a GaAs matrix, without indium in the barrier. The device characterization shows a full width at half maximum of the ground state emission as narrow as 24 meV at room temperature and a quenching of the emission between 30 K and room temperature as low as 2.75. Despite the low dot density (1.6×109 cm-2), the external quantum efficiency of our devices is 0.03%. This indicates that the individual QD efficiency of our devices is about 30% higher than that reported in the literature for state of the art InGaAs/InGaAs QD LEDs. © 2004 American Institute of Physics.
ACCESSION #
12715495

 

Related Articles

  • Electroluminescent properties of erbium-doped III–N light-emitting diodes. Zavada, J.M.; Jin, S.X.; Nepal, N.; Lin, J.Y.; Jiang, H.X.; Chow, P.; Hertog, B. // Applied Physics Letters;2/16/2004, Vol. 84 Issue 7, p1061 

    We report on the synthesis of Er-doped III–N double heterostructure light-emitting diodes (LEDs) and their electroluminescence (EL) properties. The device structures were grown through a combination of metalorganic chemical vapor deposition (MOCVD) and molecular-beam epitaxy (MBE) on...

  • 2000 h stable operation in 0.87 microm light-emitting diode using stress-free InGaP/GaAs/Si. Egawa, T.; Jimbo, T. // Applied Physics Letters;12/11/1995, Vol. 67 Issue 24, p3605 

    Develops an Al-free reliable 877 nanometer In[sub0.49]Ga[sub0.51]P/GaAs light emitting diodes (LED) on Si substrates by metalorganic chemical vapor deposition. Effects of dark line defects (DLD) on the conventional Al-containing Al[sub0.3]Ga[sub0.7]As/GaAs LED on silicon substrates; Factor...

  • Properties of InP self-assembled quantum dots embedded in In[sub 0.49](Al[sub x]Ga[sub 1-x])[sub 0.51]P for visible light emitting laser applications grown by metalorganic chemical vapor deposition. Ryou, J. H.; Dupuis, R. D.; Walter, G.; Holonyak, N.; Mathes, D. T.; Hull, R.; Reddy, C. V.; Narayanamurti, V. // Journal of Applied Physics;4/15/2002, Vol. 91 Issue 8, p5313 

    We have studied the properties of InP self-assembled quantum dots embedded in various In[sub 0.49](Al[sub x]Ga[sub 1-x])[sub 0.51]P matrix layers to optimize the growth condition of the quantum dots and structures for III-phosphide quantum-dot-based lasers operating in visible spectral regions....

  • High-density and size-controlled GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition. Miyamura, M.; Tachibana, K.; Arakawa, Y. // Applied Physics Letters;5/27/2002, Vol. 80 Issue 21, p3937 

    GaN self-assembled quantum dots (QDs) with high quality and high density have been grown by low-pressure metalorganic chemical vapor deposition under very low V/III ratios. In depositing over a critical thickness of four monolayer GaN, we observed a transition from two-dimensional to...

  • Let there be light.  // Nature Materials;May2015, Vol. 14 Issue 5, p453 

    The editor discusses roles of inorganic semiconductors, organic light emitters and colloidal quantum dots in development of light emitting diodes (LEDs). Topics discusses include celebration of 2015 as the International Year of Light and Light-based Technologies by United Nations, origin of...

  • Hybrid Organic-Inorganic Light Emitting Diodes. Vitukhnovsky, A. G. // EPJ Web of Conferences;2015, Vol. 103, p1 

    The article focuses on the development of light emitting diodes with the help of hybrid materials containing organic components and colloidal semiconductor nanocrystals. It states that semiconductor nanocrystals have unique optical properties and organic semiconductor materials are cheaper than...

  • 650-nm AlGaInP multiple-quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine. Dong, Jian-Rong; Teng, Jing-Hua; Chua, Soo-Jin; Foo, Boon-Chin; Wang, Yan-Jun; Yuan, Hai-Rong; Yuan, Shu // Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p596 

    Using tertiarybutylphosphine (TBP) as phosphorus precursor, high-quality AlGaInP epilayers and AlGaInP/GaInP multiple-quantum-well (MQW) structures have been grown by metalorganic chemical vapor deposition. The photoluminescence results indicate that the AlGaInP materials are as good as those...

  • Vibrational spectroscopy of arsenic-hydrogen complexes in ZnSe. McCluskey, M.D.; Haller, E.E. // Applied Physics Letters;6/10/1996, Vol. 68 Issue 24, p3476 

    Examines the hydrogen local vibrational modes in arsenic doped zinc selenide diodes grown by chemical vapor deposition using infrared absorption spectroscopy. Reason using the absorption peak level with hydrogen as a carrier gas; Effect of deuterium substitution of hydrogen as carrier gas;...

  • Measurement of Accumulation of Semiconductor Nanocrystal Quantum Dots by Pimephales Promelas. Leigh, Kenton L.; Bouldin, Jennifer L.; Buchanan, Roger A. // Dose-Response;2012, Vol. 10 Issue 3, p331 

    As the production and use of nanomaterials increases, it is important to understand their environmental and biological fate. Because their unmatched chemical, physical, and optical properties make them useful in a wide variety of applications including biomedical imaging, photo-voltaics, and...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics