Current-injection spiral-shaped microcavity disk laser diodes with unidirectional emission

Kneissl, M.; Teepe, M.; Miyashita, N.; Johnson, N. M.; Chern, G. D.; Chang, R. K.
April 2004
Applied Physics Letters;4/5/2004, Vol. 84 Issue 14, p2485
Academic Journal
A spiral-shaped microcavity heterojunction laser diode fabricated with InGaN multiple quantum wells is demonstrated to operate under current injection conditions and emit unidirectionally. Room-temperature laser operation was achieved for microcavity disk radii ranging from 50 to 350 μm and threshold current densities as low as 4.6 kA/cm2. Unidirectional laser emission is clearly revealed in the far-field pattern with the lateral divergence angle ranging from 60° to 75°. Output power of more than 25 mW was obtained for emission wavelengths near 400 nm. © 2004 American Institute of Physics.


Related Articles

  • Multilayer contacts to AlGaAs/GaAs photodetector heterostructures. Arbenina, V.; Budkin, I.; Marmalyuk, A. // Inorganic Materials;Mar2007, Vol. 43 Issue 3, p221 

    The processes occurring in a multilayer metallization during the fabrication of contacts to AlGaAs/GaAs quantum well heterostructures are analyzed using contact resistance measurements, microstructural analysis of the constituent metallic layers, and calculations of diffusion profiles. The...

  • CW and passive Q-switching of 1331-nm Nd:GGG laser with Co2+:LMA saturable absorber. Zuo, C.-H.; Zhang, B.-T.; He, J.-L.; Dong, X.-L.; Yang, J.-F.; Huang, H.-T.; Xu, J.-L.; Zhao, S.; Dong, C.-M.; Tao, X.-T. // Applied Physics B: Lasers & Optics;Apr2009, Vol. 95 Issue 1, p75 

    In this paper, the output performances at 1331 nm in continuous-wave (CW) operation and the passive Q-switching regime of a Nd:Gd3Ga5O12(Nd:GGG) laser crystal have been investigated under pumping with diode lasers. A maximum CW output power of 1.5 W was reached at an incident pump power of 7.5...

  • A 13.3-W laser-diode-array end-pumped Nd:GdVO4 continuous-wave laser at 1.34 µm. Du, C.; Ruan, S.; Zhang, H.; Yu, Y.; Zeng, F.; Wang, J.; Jiang, M. // Applied Physics B: Lasers & Optics;Jan2005, Vol. 80 Issue 1, p45 

    We report a high-power laser-diode-array end-pumped 0.3 at.?% Nd:GdVO4 continuous-wave laser operating at 1.34 µm. The maximum output power of 13.3 W was obtained at the incident pump power of 49.2 W, giving the corresponding optical conversion efficiency of 27% and the average slope...

  • High-efficiency eye-safe intracavity Raman laser at 1531 nm with SrWO4 crystal. Fan, Y. X.; Liu, Y.; Duan, Y. H.; Wang, Q.; Fan, L.; Wang, H. T.; Jia, G. H.; Tu, C. Y. // Applied Physics B: Lasers & Optics;Nov2008, Vol. 93 Issue 2/3, p327 

    A high-efficiency diode-end-pumped Q-switched eye-safe linearly-polarized intracavity Raman laser at 1531 nm is demonstrated, with Nd:YVO4 as the laser medium and SrWO4 as the Raman crystal. The highest average power of 1.93 W is achieved, with an incident pump of 15.6 W and a repetition rate of...

  • Simultaneous sudden changes of electrical behavior at the threshold in laser diodes. Feng, L. F.; Li, D.; Zhu, C. Y.; Wang, C. D.; Cong, H. X.; Xie, X. S.; Lu, C. Z. // Journal of Applied Physics;Sep2007, Vol. 102 Issue 6, p063102 

    Precise ac electrical measurements as well as dc I-V plots at forward bias have been used to characterize multi-quantum-well (MQW) laser diodes. Step offsets of apparent conductance, apparent capacitance, junction voltage, series resistance, and ideality factor at lasing threshold were observed....

  • High-power laser diodes with an emission wavelength of 835 nm on the basis of various types of heterostructures. Murashova, A. V.; Vinokurov, D. A.; Pikhtin, N. A.; Slipchenko, S. O.; Shamakhov, V. V.; Vasilyeva, V. V.; Kapitonov, V. A.; Leshko, A. Yu.; Lyutetskiy, A. V.; Nalet, T. A.; Nikolaev, D. N.; Stankevich, A. L.; Fetisova, N. V.; Tarasov, I. S.; Kim, Y. S.; Kang, D. H.; Lee, C. Y. // Semiconductors;Jul2008, Vol. 42 Issue 7, p862 

    Optical and electrical characteristics of different high-power multimode laser diodes with an emission wavelength of 835 nm are compared; the diodes were obtained on the basis of three systems of solid solutions: AlGaAS/GaAs, AlGaAs/GaAsP, and (Al)GaInP/GaInAsP. An output continuous optical...

  • Epitaxial films of GaInPAsSb quinary solid solutions. Kuznetsov, V. V.; Rubtsov, E. R.; Kognovitskaya, E. A. // Materials Science (0137-1339);2006, Vol. 24 Issue 4, p1057 

    The method of the obtaining quinary solid solutions on the basis of AIIIBV compounds (GaInPAsSb) with specified properties was developed. New GaInPAsSb/GaSb, GaInPAsSb/InAs heterostructures were obtained to create optoelectronic devices for the 2-5 µm spectral range. The broken-gap type II...

  • Optoelectronic feedback stabilization of current modulated laser diodes. Dellunde, Jaume; Torrent, M.C. // Applied Physics Letters;3/18/1996, Vol. 68 Issue 12, p1601 

    Examines the use of optoelectronic feedback for output stabilization of current modulated laser diodes. Methods for jitter reduction during current modulation; Comparison between output power and output power after a time delay; Accounts on time traces and power spectra; Low frequency...

  • Diode-Pumped Yb3+:YLF and Yb3+:CaF2 Laser Performance. Pirri, Angela; Alderighi, Daniele; Toci, Guido; Nikl, Martin; Sato, Hiroki; Tonelli, Mauro; Vannini, Matteo // AIP Conference Proceedings;2/2/2010, Vol. 1209 Issue 1, p91 

    We report an extensive comparison of the laser performances of diode-pumped Yb3+:YLF (30% at.) and Yb3+:CaF2 (5% at.) crystals, lasing at room-temperature and operating in two different operation modes, i.e. Continuous Wave (CW) and quasi-CW. An in-depth investigation of the crystals behavior by...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics