Anticrossing between heavy-hole states in Si0.2Ge0.8/Si-coupled quantum wells grown on Si0.5Ge0.5 pseudosubstrate

Diehl, L.; Borak, A.; Mentese, S.; Grützmacher, D.; Sigg, H.; Gennser, U.; Sagnes, I.; Campidelli, Y.; Kermarrec, O.; Bensahel, D.; Faist, J.
April 2004
Applied Physics Letters;4/5/2004, Vol. 84 Issue 14, p2497
Academic Journal
Intersubband absorption measurements were performed on a single repetition of coupled Si0.2Ge0.8/Si quantum wells grown on a Si0.5Ge0.5 pseudosubstrate. Two resonances observed at low temperature are identified with the optical transitions between the ground and the first excited heavy-hole states confined in the coupled wells through their anticrossing behavior. The measured coupling energy agrees well with calculated values. In addition, the Stark shift of a diagonal resonance between a heavy- and light-hole level was observed. © 2004 American Institute of Physics.


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