Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wells

Chauveau, J.-M.; Trampert, A.; Ploog, K. H.; Tournié, E.
April 2004
Applied Physics Letters;4/5/2004, Vol. 84 Issue 14, p2503
Academic Journal
By using transmission electron microscopy on as-grown and annealed GaInNAs/GaAs heterostructures, we demonstrate that annealing induces a correlated behavior of both In and N species within the GaInNAs quantum well. While no intermixing occurs, the analysis of the strain situation reveals that the main driving force for the observed inward diffusion is not composition gradients at the interfaces, but local strain fields. This mechanism leads to the improvement of the photoluminescence (PL) properties and to the blueshift of the PL peak. © 2004 American Institute of Physics.


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