TITLE

Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wells

AUTHOR(S)
Chauveau, J.-M.; Trampert, A.; Ploog, K. H.; Tournié, E.
PUB. DATE
April 2004
SOURCE
Applied Physics Letters;4/5/2004, Vol. 84 Issue 14, p2503
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
By using transmission electron microscopy on as-grown and annealed GaInNAs/GaAs heterostructures, we demonstrate that annealing induces a correlated behavior of both In and N species within the GaInNAs quantum well. While no intermixing occurs, the analysis of the strain situation reveals that the main driving force for the observed inward diffusion is not composition gradients at the interfaces, but local strain fields. This mechanism leads to the improvement of the photoluminescence (PL) properties and to the blueshift of the PL peak. © 2004 American Institute of Physics.
ACCESSION #
12715488

 

Related Articles

  • Impurity-induced disordering of single well AlxGa1-xAs-GaAs quantum well heterostructures. Meehan, K.; Brown, J. M.; Camras, M. D.; Holonyak, N.; Burnham, R. D.; Paoli, T. L.; Streifer, W. // Applied Physics Letters;1984, Vol. 44 Issue 4, p428 

    Transmission electron microscopy and photoluminescence data are used to show that a single GaAs quantum well (Lz ≊70 Å) confined by Alx′Ga1-x′As (x′∼0.3) layers can, via low-temperature (600 °C) Zn diffusion, be interdiffused (''absorbed'') into the confining...

  • An investigation of InxGa1-xAs/GaAs quantum wells grown by molecular-beam epitaxy. Jeong, Jichai; Shahid, M. A.; Lee, J. C.; Schlesinger, T. E.; Milnes, A. G. // Journal of Applied Physics;6/1/1988, Vol. 63 Issue 11, p5464 

    Examines strained layer In[subx]Ga[sub1-x]As/GaAs quantum wells by photoluminescence and transmission electron microscopy. Role of heterojunction interfaces in the performance of a device; Instrument used to measure photoluminescence spectra.

  • Pseudomorphic GeSn/Ge (001) heterostructures. Tonkikh, A.; Talalaev, V.; Werner, P. // Semiconductors;Nov2013, Vol. 47 Issue 11, p1452 

    The synthesis of pseudomorphic GeSn heterostructures on a Ge (001) substrate by molecular-beam epitaxy is described. Investigations by transmission electron microscopy show that the GeSn layers are defect free and possess cubic diamondlike structure. Photoluminescence spectroscopy reveals...

  • Generation and behavior of pure-edge threading misfit dislocations in InxGa1-xN/GaN multiple quantum wells. Lü, W.; Li, D. B.; Li, C. R.; Zhang, Z. // Journal of Applied Physics;11/1/2004, Vol. 96 Issue 9, p5267 

    The relaxation of the misfit strain by the formation of misfit dislocations in InxGa1-xN/GaN multiple quantum wells grown by metal-organic chemical-vapor deposition was investigated by the cross-sectional transmission electron microscopy, double crystal x-ray diffraction, and...

  • Shallow-Deep InGaN Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar ( $$ 11\bar{2}2 $$) Facet GaN. Wang, Lianshan; Lu, Zhiqin; Liu, Sheng; Feng, Zhe // Journal of Electronic Materials;Jul2011, Vol. 40 Issue 7, p1572 

    We report growth and characterization of a shallow-deep InGaN/GaN multiple-quantum-well (MQW) system for dual-wavelength emission grown on semipolar ( $$ 11\bar{2}2 $$) facet GaN. Structural and optical properties of the InGaN multiple-quantum-well system were investigated by scanning electron...

  • Photoluminescence of Heterostructures with Highly Strained Ga0.76In0.24As Quantum Wells Separated by GaAsyP1 � y Compensating Barriers. Shamakhov, V. V.; Vinokurov, D. A.; Stankevich, A. L.; Kapitonov, V. A.; Zorina, S. A.; Nikolaev, D. N.; Murashova, A. V.; Bondarev, A. D.; Tarasov, I. S. // Technical Physics Letters;Dec2005, Vol. 31 Issue 12, p993 

    Based on the results of model calculations and the data of photoluminescence measurements and transmission electron microscopy, the optimum composition (GaAs0.85P0.15) of compensating barriers for a structure with four highly strained Ga0.76In0.24As quantum wells (QWs) has been established that...

  • Improved GaAs/AlGaAs quantum-well heterostructures by organometallic vapor-phase epitaxy. Schaus, C. F.; Shealy, J. R.; Eastman, L. F.; Cooman, B. C.; Carter, C. B. // Journal of Applied Physics;1/15/1986, Vol. 59 Issue 2, p678 

    Investigates the properties of gallium arsenide and aluminum gallium arsenide quantum well heterostructures using transmission electron microscopy together with photoluminescence. Description of modifications to the reactor; Element used to characterize heterostructures; Factor used to...

  • Photoluminescence line shape of excitons in GaAs single-quantum wells with and without heterointerface ordering. Fujiwara, K.; Kanamoto, K.; Tsukada, N.; Miyatake, H.; Koyama, H. // Journal of Applied Physics;8/1/1989, Vol. 66 Issue 3, p1488 

    Presents information on a study which investigated the photoluminescence line shape of excitons at low temperatures in gallium arsenide (GaAs) single-quantum wells (SQW) grown by molecular beam epitaxy with and without intentional heterointerface ordering. Examination of the samples by...

  • Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing. Chuo, Chang-Cheng; Chang, Mao Nan; Pan, Fu-Ming; Lee, Chia-Ming; Chyi, Jen-Inn // Applied Physics Letters;2/18/2002, Vol. 80 Issue 7, p1138 

    The optical properties of thermally annealed InGaN/GaN multiple quantum wells were investigated by low-temperature photoluminescence measurements. It is found that the photoluminescence peak exhibits a redshift followed by a blueshift as the annealing time is increased. In contrast, the assigned...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics