Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions

Cheng, Yung-Chen; Lin, En-Chiang; Wu, Cheng-Ming; Yang, C. C.; Yang, Jer-Ren; Rosenauer, Andreas; Ma, Kung-Jen; Shi, Shih-Chen; Chen, L. C.; Pan, Chang-Chi; Chyi, Jen-Inn
April 2004
Applied Physics Letters;4/5/2004, Vol. 84 Issue 14, p2506
Academic Journal
The results of photoluminescence (PL), detection-energy-dependent photoluminescence excitation (DEDPLE), excitation-energy-dependent photoluminescence (EEDPL), and strain state analysis (SSA) of three InGaN/GaN quantum-well (QW) samples with silicon doping in the well, barrier and an undoped structure are compared. The SSA images show strongly clustering nanostructures in the barrier-doped sample and relatively weaker composition fluctuations in the undoped and well-doped samples. Differences in silicon doping between the samples give rise to the differences in DEDPLE and EEDPL spectra, as a result of the differences in carrier localization. In addition, the PL results provide us clues for speculating that the S-shaped PL peak position behavior is dominated by the quantum-confined Stark effect in an undoped InGaN/GaN QW structure. © 2004 American Institute of Physics.


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