Highly efficient sensitizing of erbium ion luminescence in size-controlled nanocrystalline Si/SiO2 superlattice structures

Timoshenko, V. Yu.; Lisachenko, M. G.; Kamenev, B. V.; Shalygina, O. A.; Kashkarov, P. K.; Heitmann, J.; Schmidt, M.; Zacharias, M.
April 2004
Applied Physics Letters;4/5/2004, Vol. 84 Issue 14, p2512
Academic Journal
Comparative studies of photoluminescence (PL) of undoped and Er-doped size-controlled nanocrystalline Si/SiO2 superlattice structures show that the optical excitation of Si nanocrystals can be completely transferred to the Er3+ ions in surrounding SiO2, resulting in a strong PL line at 1.5 μm. The PL yield of the Er-doped structure increases for higher photon energy of excitation and for smaller nanocrystal sizes. This highly efficient sensitizing of the Er-related PL is explained by a strong coupling between excitons confined in Si nanocrystals and neighboring Er3+ ions in their upper excited states. © 2004 American Institute of Physics.


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