Remote hydrogen plasma doping of single crystal ZnO

Strzhemechny, Yuri M.; Mosbacker, Howard L.; Look, David C.; Reynolds, Donald C.; Litton, Cole W.; Garces, Nelson Y.; Giles, Nancy C.; Halliburton, Larry E.; Niki, Shigeru; Brillson, Leonard J.
April 2004
Applied Physics Letters;4/5/2004, Vol. 84 Issue 14, p2545
Academic Journal
We demonstrate that remote plasma hydrogenation can increase electron concentrations in ZnO single crystals by more than an order of magnitude. We investigated the effects of this treatment on Hall concentration and mobility as well as on the bound exciton emission peak I4 for a variety of ZnO single crystals–bulk air annealed, Li doped, and epitaxially grown on sapphire. Hydrogen increases I4 intensity in conducting samples annealed at 500 and 600 °C and partially restores emission in the I4 range for Li-diffused ZnO. Hydrogenation increases carrier concentration significantly for the semi-insulating Li doped and epitaxial thin film samples. These results indicate a strong link between the incorporation of hydrogen, increased donor-bound exciton PL emission, and increased n-type conductivity. © 2004 American Institute of Physics.


Related Articles

  • Distribution of visible luminescence centers in hydrogen-doped ZnO. Lem, Laurent L.C.; Ton-That, Cuong; Phillips, Matthew R. // Journal of Materials Research;12/01/2011, Vol. 26 Issue 23, p2912 

    ZnO crystals have been investigated by scanning cathodoluminescence microscopy and spectroscopy at 80 K following hydrogen incorporation by plasma exposure. The intensity of the ZnO near-band-edge (NBE) emission is greatly enhanced while the defect-related green emission is quenched following...

  • Polarity control of ZnO films grown on nitrided c-sapphire by molecular-beam epitaxy. Wang, Xinqiang; Tomita, Yosuke; Roh, Ok-Hwan; Ohsugi, Masayuki; Che, Song-Bek; Ishitani, Yoshihiro; Yoshikawa, Akihiko // Applied Physics Letters;1/3/2005, Vol. 86 Issue 1, p011921 

    The polarity of molecular-beam epitaxy grown ZnO films was controlled on nitrided c-sapphire substrate by modifying the interface between the ZnO buffer layer and the nitrided sapphire. The ZnO film grown on nitrided sapphire was proven to be Zn-polar while the O-polar one was obtained by using...

  • Remote hydrogen plasma processing of ZnO single crystal surfaces. Strzhemechny, Yuri M.; Nemergut, John; Smith, Phillip F.; Bae, Junjik; Look, David C.; Brilison, Leonard J. // Journal of Applied Physics;10/1/2003, Vol. 94 Issue 7, p4256 

    We have studied the effects of remote hydrogen plasma treatment on the defect characteristics in single crystal ZnO. Temperature-dependent (9–300 K) and excitation intensity-dependent photoluminescence spectra reveal that H-plasma exposure of ZnO effectively suppresses the free-exciton...

  • H2O2-molecular beam epitaxy of high quality ZnO. El Shaer, A.; Bakin, A.; Che Mofor, A.; Bläsing, J.; Krost, A.; Stoimenos, J.; Pécz, B.; Kreye, M.; Waag, A. // Applied Physics A: Materials Science & Processing;Jul2007, Vol. 88 Issue 1, p57 

    We have studied the growth and characterization of ZnO epilayers on (0001)-sapphire by H2O2-molecular beam epitaxy (MBE). A high temperature (HT) MgO buffer followed by a low-temperature ZnO buffer was introduced in order to accommodate the lattice mismatch between ZnO and sapphire. The surface...

  • Schottky contacts on differently grown n-type ZnO single crystals. Kolkovsky, Vl.; Scheffler, L.; Hieckmann, E.; Lavrov, E. V.; Weber, J. // Applied Physics Letters;2/21/2011, Vol. 98 Issue 8, p082104 

    The preparation and characterization of Schottky contacts on differently grown n-type ZnO crystals was studied. We demonstrate that depending on the crystal growth process different procedures of surface treatment should be used to achieve good Schottky contacts. A treatment in a dc-hydrogen...

  • Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment. Cai, P. F.; You, J. B.; Zhang, X. W.; Dong, J. J.; Yang, X. L.; Yin, Z. G.; Chen, N. F. // Journal of Applied Physics;Apr2009, Vol. 105 Issue 8, p083713 

    We studied the effects of hydrogen plasma treatment on the electrical and optical properties of ZnO films deposited by radio frequency magnetron sputtering. It is found that the ZnO:H film is highly transparent with the average transmittance of 92% in the visible range. Both carrier...

  • Buffer-enhanced room-temperature growth and characterization of epitaxial ZnO thin films. Sasaki, Atsushi; Hara, Wakana; Matsuda, Akifumi; Tateda, Norihiro; Otaka, Sei; Akiba, Shusaku; Saito, Keisuke; Yodo, Tokuo; Yoshimoto, Mamoru // Applied Physics Letters;6/6/2005, Vol. 86 Issue 23, p231911 

    The room-temperature epitaxial growth of ZnO thin films on NiO buffered sapphire (0001) substrate was achieved by using the laser molecular-beam-epitaxy method. The obtained ZnO films had the ultrasmooth surface reflecting the nanostepped structure of the sapphire substrate. The crystal...

  • Growth and Electronic Properties Of ZnO Epilayers by Plasma-Assisted Molecular Beam Epitaxy. Murphy, T. E.; Chen, D. Y.; Phillips, J. D. // Journal of Electronic Materials;Jun2005, Vol. 34 Issue 6, p699 

    ZnO thin films were grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy (MBE). The crystalline properties of the layers as measured by x-ray diffraction were found to improve with lower growth temperatures, where the full-width at half-maximum (FWHM) of the x-ray...

  • Electrodeposition of Zinc Oxide on Graphene Tips Electrochemically Exfoliated and O2-Plasma Treated. Eduardo Saito; Antunes, E. F.; Pianassola, M.; Christovan, F. H.; Machado, J. P. B.; Corat, E. J.; Trava-Airoldi, V. J. // Advanced Materials Research;2014, Vol. 975, p179 

    Zinc oxide (ZnO) has several applications. Electrodeposition of zinc oxide thin films from aqueous solution of zinc nitrate has been deposited on graphenated low cost pencil graphite. The electrochemical graphene production at the tips was performed by using a low cost DC source and a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics