A distributed charge storage with GeO2 nanodots

Chang, T. C.; Yan, S. T.; Hsu, C. H.; Tang, M. T.; Lee, J. F.; Tai, Y. H.; Liu, P. T.; Sze, S. M.
April 2004
Applied Physics Letters;4/5/2004, Vol. 84 Issue 14, p2581
Academic Journal
In this study, a distributed charge storage with GeO2 nanodots is demonstrated. The mean size and aerial density of the nanodots embedded in SiO2 are estimated to be about 5.5 nm and 4.3×1011 cm-2, respectively. The composition of the dots is also confirmed to be GeO2 by x-ray absorption near-edge structure analyses. A significant memory effect is observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window is estimated to ∼0.45 V. Also, a physical model is proposed to demonstrate the charge storage effect through the interfacial traps of GeO2 nanodots. © 2004 American Institute of Physics.


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