Bias-temperature stability of ultrathin parylene-capped dielectrics: influence of surface oxygen on copper ion diffusion

Senkevich, Jay J.; Wang, Pei-I.; Wiegand, Chris J.; Lu, T.-M.
April 2004
Applied Physics Letters;4/5/2004, Vol. 84 Issue 14, p2617
Academic Journal
The effect of interfacial oxygen on copper ion penetration was investigated with metal–insulator–semiconductor capacitor (MISCAP) structures with and without an ultrathin (50 Å) polymer-capping layer. The amount of interfacial oxygen and hence the degree of copper ion penetration could be affected by the thermal annealing of the MISCAPs at 150 and 250 °C and in inert and reducing environments. The bias-temperature stressing (BTS) of a Cu/50 Å parylene-N/3000 Å plasma-enhanced tetraethoxysilane (PETEOS)/200 Å thermal SiO2/Si MISCAP at 150 °C and 1 MV/cm and previously annealed at 250 °C in Ar-3%H2 resulted in no flatband voltage shift from as-annealed to 180 min of BTS. The lack of flatband voltage shift is indicative of no copper ion penetration and a stable dielectric. Under higher electric fields (1.5–2 MV/cm) and at 150 °C, the polymer-capped PETEOS dielectric hindered copper ion penetration, but did not prevent it. © 2004 American Institute of Physics.


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