TITLE

Bias-temperature stability of ultrathin parylene-capped dielectrics: influence of surface oxygen on copper ion diffusion

AUTHOR(S)
Senkevich, Jay J.; Wang, Pei-I.; Wiegand, Chris J.; Lu, T.-M.
PUB. DATE
April 2004
SOURCE
Applied Physics Letters;4/5/2004, Vol. 84 Issue 14, p2617
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effect of interfacial oxygen on copper ion penetration was investigated with metal–insulator–semiconductor capacitor (MISCAP) structures with and without an ultrathin (50 Å) polymer-capping layer. The amount of interfacial oxygen and hence the degree of copper ion penetration could be affected by the thermal annealing of the MISCAPs at 150 and 250 °C and in inert and reducing environments. The bias-temperature stressing (BTS) of a Cu/50 Å parylene-N/3000 Å plasma-enhanced tetraethoxysilane (PETEOS)/200 Å thermal SiO2/Si MISCAP at 150 °C and 1 MV/cm and previously annealed at 250 °C in Ar-3%H2 resulted in no flatband voltage shift from as-annealed to 180 min of BTS. The lack of flatband voltage shift is indicative of no copper ion penetration and a stable dielectric. Under higher electric fields (1.5–2 MV/cm) and at 150 °C, the polymer-capped PETEOS dielectric hindered copper ion penetration, but did not prevent it. © 2004 American Institute of Physics.
ACCESSION #
12715450

 

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