Realization of InAs-based two-dimensional artificial lattice by selective area metalorganic vapor phase epitaxy

Mohan, Premila; Motohisa, Junichi; Fukui, Takashi
April 2004
Applied Physics Letters;4/5/2004, Vol. 84 Issue 14, p2664
Academic Journal
The experimental realization of two-dimensional semiconductor artificial lattice based on InAs quantum wires is reported here. Artificial Kagome lattice fabricated using InAs quantum wires of unit cell size 0.7 μm has been theoretically proved to show ferromagnetism. Fabrication of such a structure with InAs quantum wires was attempted by selective area metalorganic vapor phase epitaxy using GaAs (111)A substrates. Temperature-dependent growth mode change was observed and Volmer-Weber growth mode at high temperature inhibited the formation of uniform structure. Low temperature and low AsH3 partial pressure resulted in the successful fabrication of 0.7 μm period InAs-based Kagome lattice structure. © 2004 American Institute of Physics.


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