TITLE

Origin of luminescence from Si--implanted (1102) Al2O3

AUTHOR(S)
Park, C. J.; Kwon, Y. H.; Lee, Y. H.; Kang, T. W.; Cho, H. Y.; Kim, Sung; Choi, Suk-Ho; Elliman, R. G.
PUB. DATE
April 2004
SOURCE
Applied Physics Letters;4/5/2004, Vol. 84 Issue 14, p2667
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Cathodoluminescence (CL), photoluminescence, and transmission electron microscopy have been used to study the light-emitting and structural properties of (1&1bar;02) sapphire implanted with 30-key Si ions and subsequently annealed at temperatures up to 1100°C. This procedure creates oriented Si crystallites with diameters in the range 4-5 nm together with extended defects parallel to the (0001) planes of (1&1bar;02) Al2O3. Several CL hands found in Si--implanted Al2O3(Al2O3:Si-) before and/or after annealing are compared with those from O- and Al--implanted samples. These and related experiments, including annealing temperature and implant dose dependence, suggest that a yellow CL band (2.16 eV/574 nm) from annealed Al2O3:Si- is nanocrystal related, while others are defect related.
ACCESSION #
12715433

 

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