1.4 μm band electroluminescence from organic light-emitting diodes based on thulium complexes

Zang, F. X.; Hong, Z. R.; Li, W. L.; Li, M. T.; Sun, X. Y.
April 2004
Applied Physics Letters;4/5/2004, Vol. 84 Issue 14, p2679
Academic Journal
Near-infrared (NIR) electroluminescence (EL) devices have been fabricated employing thulium complexes as emitting materials. The EL emissions at 1.4 and 0.8 μm were observed from the devices of tris-(dibenzoylmethanato)-mono-(bathophenanthroline or 1,10-phenonthroline) thulium [Tm(DBM)3bath or Tm(DBM)3phen] at room temperature and assigned to 3F4–3H4 and 3F4–3H6 transitions of Tm3+ ions, respectively. By comparison with the NIR emissions of four Tm complexes with different ligands, it was found that the first ligand played a more important role for the Tm3+ ion emissions rather than the second one. In order to meet the requirement of optical communication, both Tm(DBM)3bath and erbium [Er] (DBM)3bath were incorporated into EL devices so that a broadened EL emission band ranging from 1.4 to 1.6 μm was obtained, showing the potential application of Tm complexes for optical communication systems. © 2004 American Institute of Physics.


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