Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg)O channel

Kwon, Y.; Li, Y.; Heo, Y. W.; Jones, M.; Holloway, P. H.; Norton, D. P.; Park, Z. V.; Li, S.
April 2004
Applied Physics Letters;4/5/2004, Vol. 84 Issue 14, p2685
Academic Journal
We report on enhancement-mode ZnO-based field-effect transistors that utilize an acceptor-doped channel. In particular, the active channel is polycrystalline ZnO doped with Mg, to increase the band gap, and P, to decrease the electron carrier concentration. Devices are realized that display an on/off ratio of 103 and a channel mobility on the order of 5 cm2/V s. HfO2 serves as the gate dielectric. Capacitance–voltage properties measured across the gate indicate that the ZnO channel is n type. The use of acceptor doping improves the control of the initial channel conductance while having a minimal impact on channel mobility relative to undoped ZnO polycrystalline channels. © 2004 American Institute of Physics.


Related Articles

  • Impact of surface properties on the dielectric breakdown for polycrystalline and multilayered... Oh, Jeong-Hoon; Lee, Y.H. // Journal of Applied Physics;12/15/1997, Vol. 82 Issue 12, p6203 

    Studies the impact of surface properties on the dielectric breakdown for polycrystalline and multilayered BaTIO3 thin films. Definition on the behavior of the electrical conductions for polycrystalline and multilayered BaTio3 thin films; Characteristics of a single polycrystalline and three...

  • Temperature dependent leakage currents in polycrystalline silicon thin film transistors. kim, Chul Ha; Sohn, Ki-Soo // Journal of Applied Physics;6/15/1997, Vol. 81 Issue 12, p8084 

    Studies the origins of the leakage current in polycrystalline silicon thin film transistors. Measurement of temperature dependent transfer characteristics as a function of drain voltage; Three kinds of leakage current; Formation of the leakage current that may arise from the generation current...

  • Quantum transport in polycrystalline silicon 'slit nano wire.'. Wada, Yasuo; Suga, Mitsuo // Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p624 

    Details the electrical conduction characteristics of polycrystalline silicon slit nano wire. Fabrication of the slit nano wire; Relationship between temperature and slit nano wire resistance; Factors affecting the electrical conductance of the polycrystalline silicon slit nano wire.

  • Structural and electronic transport properties of polycrystalline p-type CoSb3. Anno, H.; Hatada, K.; Shimizu, H.; Matsubara, K.; Notohara, Y.; Sakakibara, T.; Tashiro, H.; Motoya, L. // Journal of Applied Physics;5/15/1998, Vol. 83 Issue 10, p5270 

    Provides information on an experiment investigating the structural and electronic transport properties of polycrystalline p-type CoSb3 with different grain sizes. Methodology used to conduct the experiment; Effects of the grain boundary on thermoelectric properties; Results of the experiment.

  • The effect of the electron irradiation on the electrical properties of thin polycrystalline CdS... Ruxandra, V.; Antohe, S. // Journal of Applied Physics;7/15/1998, Vol. 84 Issue 2, p727 

    Presents a study which examined the effect of the electron irradiation structures on the electrical properties of a polycrystalline thin layer of cadium suphlide CdS. Experimental procedures used to conduct the study; What is CdS; Reference to the dark current-voltage characteristics of the...

  • Specular and diffuse electron scattering at interfaces in metal spin-valve structures. Keavney, David J.; Park, Sung-Kyun // Journal of Applied Physics;7/1/1999, Vol. 86 Issue 1, p476 

    Presents information on a study which described the thickness-dependent resistance measurements of specular and diffuse scattering in polycrystalline sputtered metal/metal bilayers. Experimental details; Results and discussion.

  • Size and shape effects on exchange field of patterned NiO/NiFe films. Wang, Yu-Jen; Lai, Chih-Huang // Journal of Applied Physics;6/1/2001, Vol. 89 Issue 11, p7537 

    The exchange field and domain configurations were investigated in patterned polycrystalline and (100) NiO/NiFe films. The exchange field was enhanced in the polycrystalline patterns with the aspect ratio larger than one (the long edge parallel to the original easy axis). Exchange field of...

  • Studies of the Hydrogen Evolution Reaction on Raney Nickel—Molybdenum Electrodes. Birry, L.; Lasia, A. // Journal of Applied Electrochemistry;Jul2004, Vol. 34 Issue 7, p735 

    The hydrogen evolution reaction was studied in 1 M KOH at 25 °C on two types of electrodes: (i) pressed powders of Ni or NiMo with Al, heated at 700 °C; (ii) Ni–Al–Mo powders deposited by vacuum plasma spraying. These materials were treated with alkaline solution to leach out...

  • Determination of the densities of gap states in hydrogenated polycrystalline Si and.... Min Cao; Tsu-Jae King // Applied Physics Letters;8/10/1992, Vol. 61 Issue 6, p672 

    Presents densities of gap states using the field-effect conductance method for hydrogenated polycrystalline Si[sub 0.8]Ge[sub 0.2] and for polycrystalline Si. Hydrogenation of polycrystalline films; Comparison of density states between two polycrystalline films; Significance of dangling bond...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics