TITLE

Demonstration of a 256×256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors

AUTHOR(S)
Jiang, J.; Mi, K.; Tsao, S.; Zhang, W.; Lim, H.; O'Sullivan, T.; Sills, T.; Razeghi, M.; Brown, G.J.; Tidrow, M.Z.
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2232
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report a demonstration of an infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors. The middle-wavelength infrared quantum-dot infrared photodetector (QDIP) structure was grown via low-pressure metal organic chemical vapor deposition. A detectivity of 3.6×10[sup 10] cm Hz[sup 1/2]/W was achieved at T=95 K and a bias of -1.4 V. The background limited temperature of our QDIP was 140 K with a 45° field of view. A 256×256 detector array was fabricated with dry etching, and hybridized to a Litton readout chip by indium bumps. Thermal imaging was achieved at temperatures up to 120 K. At T=77 K, the noise equivalent temperature difference was measured as 0.509 K with a 300 K background and f/2.3 optics. © 2004 American Institute of Physics.
ACCESSION #
12606889

 

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