High brightness GaInAs/(Al)GaAs quantum-dot tapered lasers at 980 nm with high wavelength stability

Auzanneau, Sophie-Charlotte; Calligaro, Michel; Krakowski, Michel; Klopf, Frank; Deubert, Stefan; Reithmaier, Johann Peter; Forchel, Alfred
March 2004
Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2238
Academic Journal
High brightness (2 W with M[sup 2]=3.4) is demonstrated at 980 nm using a gain-guided tapered GaInAs/(Al)GaAs quantum-dot laser. A remarkable low temperature shift (0.09 nm/K) of the emission wavelength is observed. Moreover, at 20 °C, the emission wavelength is quasiconstant as a function of the injected current. © 2004 American Institute of Physics.


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