Morphological properties of GaN quantum dots doped with Eu

Hori, Y.; Jalabert, D.; Andreev, T.; Monroy, E.; Tanaka, M.; Oda, O.; Daudin, B.
March 2004
Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2247
Academic Journal
Morphological properties of Eu-doped GaN quantum dots grown by molecular beam epitaxy have been studied. Eu tends to segregate on the surface of AlN and GaN, leading to drastic changes in adatom kinetics. As a consequence, both size and density of Eu-doped GaN quantum dots strongly depend on the Eu flux used during the growth. © 2004 American Institute of Physics.


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