GaN epitaxy on thermally treated c-plane bulk ZnO substrates with O and Zn faces

Xing Gu, M.; Reshchikov, Michael A.; Teke, Ali; Johnstone, Daniel; Morkoç, Hadis; Nemeth, Bill; Nause, Jeff
March 2004
Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2268
Academic Journal
ZnO is considered as a promising substrate for GaN epitaxy because of stacking match and close lattice match to GaN. Traditionally, however, it suffered from poor surface preparation which hampered epitaxial growth in general and GaN in particular. In this work, ZnO substrates with atomically flat and terrace-like features were attained by annealing at high temperature in air. GaN epitaxial layers on such thermally treated basal plane ZnO with Zn and O polarity have been grown by molecular beam epitaxy, and two-dimensional growth mode was achieved as indicated by reflection high-energy electron diffraction. We observed well-resolved ZnO and GaN peaks in the high-resolution x-ray diffraction scans, with no Ga[sub 2]ZnO[sub 4] phase detectable. Low-temperature photoluminescence results indicate that high-quality GaN can be achieved on both O- and Zn-face ZnO. © 2004 American Institute of Physics.


Related Articles

  • Strong circular photogalvanic effect in ZnO epitaxial films. Zhang, Q.; Wang, X. Q.; Yin, C. M.; Shen, B.; Chen, Y. H.; Chang, K.; Ge, W. K. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p703 

    A strong circular photogalvanic effect (CPGE) in ZnO epitaxial films was reported under interband excitation. It was observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not...

  • Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy. Ko, H. J.; Ko, H.J.; Chen, Y. F.; Chen, Y.F; Hong, S. K.; Hong, S.K.; Wenisch, H.; Yao, T.; Look, D. C.; Look, D.C. // Applied Physics Letters;12/4/2000, Vol. 77 Issue 23 

    We have investigated the structural and optical properties of Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy. The carrier concentration in Ga-doped ZnO films can be controlled from 1.33x10[sup 18]/cm[sup 3] to 1.13x10[sup 20]/cm[sup 3]. Despite high Ga...

  • Effect of substrate temperature on the photoelectrochemical responses of Ga and N co-doped ZnO films. Shet, Sudhakar; Kwang-Soon Ahn; Heli Wang; Nuggehalli, Ravindra; Yanfa Yan; Turner, John; Al-Jassim, Mowafak // Journal of Materials Science;Oct2010, Vol. 45 Issue 19, p5218 

    Ga–N co-doped ZnO thin films with reduced bandgaps were deposited on F-doped tin-oxide-coated glass by radio-frequency magnetron sputtering at different substrate temperatures in mixed N2 and O2 gas ambient. We found that Ga–N co-doped ZnO films exhibited enhanced crystallinity...

  • Effect of GaN interlayer on polarity control of epitaxial ZnO thin films grown by molecular beam epitaxy. Wang, X. Q.; Sun, H. P.; Pan, X. Q. // Applied Physics Letters;10/11/2010, Vol. 97 Issue 15, p151908 

    Epitaxial ZnO thin films were grown on nitrided (0001) sapphire substrates with an intervening GaN layer by rf-plasma-assisted molecular beam epitaxy. It was found that polarity of the ZnO epilayer could be controlled by modifying the GaN interlayer. ZnO grown on a distorted 3-nm-thick GaN...

  • Role of interfacial compound formation associated with the use of ZnO buffers layers in the hydride vapor phase epitaxy of GaN. Gu, Shulin; Shulin Gu; Zhang, Rong; Rong Zhang; Sun, Jingxi; JingXi Sun; Zhang, Ling; Ling Zhang; Kuech, T. F.; Kuech, T.F. // Applied Physics Letters;6/5/2000, Vol. 76 Issue 23 

    ZnO buffer layers have been used in the hydride vapor phase epitaxy of GaN in order to improve the initial nucleation and growth of the GaN and hence the subsequent materials properties. The specific role of the ZnO buffer layer was investigated by x-ray photoelectron spectroscopy and x-ray...

  • Erratum: "Biexciton emission from high-quality ZnO films grown on epitaxial GaN by plasma-assisted molecular-beam epitaxy" [Appl. Phys. Lett. 77, 537 (2000)]. Ko, H. J.; Ko, H.J.; Chen, Y. F.; Chen, Y.F.; Yao, T.; Miyajima, H.; Yamamoto, A.; Goto, T. // Applied Physics Letters;12/18/2000, Vol. 77 Issue 25 

    Presents a correction to the article 'Biexciton emission from high-quality ZnO films grown on epitaxial GaN by plasma-assisted molecular-beam epitaxy,' published in the year 2000 issue of the 'Applied Physics Letters' journal.

  • Epitaxial growth of ZnO films on Si substrates using an epitaxial GaN buffer. Nahhas, Ahmed; Kim, Hong Koo; Blachere, Jean // Applied Physics Letters;3/12/2001, Vol. 78 Issue 11, p1511 

    We report on epitaxial growth of ZnO films on Si(111) substrates using an epitaxial GaN buffer layer. A rf magnetron sputtering process has been developed and utilized in growing epitaxial GaN buffers on Si, and then ZnO films on the GaN-buffered Si substrates. X-ray diffraction analysis shows...

  • Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN. Rogers, D. J.; Hosseini Teherani, F.; Ougazzaden, A.; Gautier, S.; Divay, L.; Lusson, A.; Durand, O.; Wyczisk, F.; Garry, G.; Monteiro, T.; Correira, M. R.; Peres, M.; Neves, A.; McGrouther, D.; Chapman, J. N.; Razeghi, M. // Applied Physics Letters;8/13/2007, Vol. 91 Issue 7, p071120 

    Continued development of GaN-based light emitting diodes is being hampered by constraints imposed by current non-native substrates. ZnO is a promising alternative substrate but it decomposes under the conditions used in conventional GaN metal organic vapor phase epitaxy (MOVPE). In this work,...

  • Epitaxial lateral overgrowth of [formula] semipolar GaN on [formula] m-plane sapphire by metalorganic chemical vapor deposition. Ni, X.; Özgür, Ü.; Baski, A. A.; Morkoç, H.; Zhou, Lin; Smith, David J.; Tran, C. A. // Applied Physics Letters;4/30/2007, Vol. 90 Issue 18, p182109 

    The authors report the growth of semipolar [formula] GaN films on nominally on-axis [formula] m-plane sapphire substrates using metal organic chemical vapor deposition. High-resolution x-ray diffraction (XRD) results indicate a preferred (1122) GaN orientation. Moreover,...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics