TITLE

GaN epitaxy on thermally treated c-plane bulk ZnO substrates with O and Zn faces

AUTHOR(S)
Xing Gu, M.; Reshchikov, Michael A.; Teke, Ali; Johnstone, Daniel; Morkoç, Hadis; Nemeth, Bill; Nause, Jeff
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2268
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
ZnO is considered as a promising substrate for GaN epitaxy because of stacking match and close lattice match to GaN. Traditionally, however, it suffered from poor surface preparation which hampered epitaxial growth in general and GaN in particular. In this work, ZnO substrates with atomically flat and terrace-like features were attained by annealing at high temperature in air. GaN epitaxial layers on such thermally treated basal plane ZnO with Zn and O polarity have been grown by molecular beam epitaxy, and two-dimensional growth mode was achieved as indicated by reflection high-energy electron diffraction. We observed well-resolved ZnO and GaN peaks in the high-resolution x-ray diffraction scans, with no Ga[sub 2]ZnO[sub 4] phase detectable. Low-temperature photoluminescence results indicate that high-quality GaN can be achieved on both O- and Zn-face ZnO. © 2004 American Institute of Physics.
ACCESSION #
12606877

 

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