Passivation of Mn acceptors in GaMnAs

Brandt, M.S.; Goennenwein, S.T.B.; Wassner, T.A.; Kohl, F.; Lehner, A.; Huebi, H.; Graf, T.; Stutzmann, M.; Koeder, A.; Schoch, W.; Waag, A.
March 2004
Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2277
Academic Journal
The effects of hydrogen and deuterium on ferromagnetic GaAs doped with high concentrations of Mn (≈10[sup 21] cm[sup -3]) are studied. Secondary ion mass spectroscopy depth profiles show that D is incorporated in the same concentration as Mn. The epilayers change from metallic to semiconducting behavior upon hydrogenation. Fourier transform infrared absorption measurements show the As–H and As–D local vibrational modes characteristic for the complexes of hydrogen with group-II acceptors in GaAs. © 2004 American Institute of Physics.


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