Interpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP[sub 2]/GaAs interface

Xu, S.J.; Li, Q.; Dong, J.-R.; Chua, S.J.
March 2004
Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2280
Academic Journal
In this letter, we report on temperature-dependent anti-Stokes photoluminescence (ASPL) at an interface between partially ordered GaInP[sub 2] epilayer and GaAs substrate. It is found that the intensity of the ASPL depends strongly on temperature accompanying with a clear blueshift in energy. A localized-state luminescence model was employed to quantitatively interpret temperature dependence of the ASPL. Excellent agreement between the theory and experiment was obtained. Radiative recombination mechanism of the up-converted carriers was discussed. © 2004 American Institute of Physics.


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