TITLE

Clear quantum-confined luminescence from crystalline silicon/SiO[sub 2] single quantum wells

AUTHOR(S)
Eun-Chel Cho, A.; Green, Martin A.; Xia, James; Corkish, Richard; Reece, Peter; Gai, Mike
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2286
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Crystalline silicon single quantum wells (QWs) were fabricated by high-temperature thermal oxidation of ELTRAN® (Epitaxial Layer TRANsfer) silicon-on-insulator (SOI) wafers. The Si layer thicknesses enclosed by thermal SiO[sub 2] range from 0.8 to 5 nm. Luminescence energies from such QWs vary from 1.77 to 1.35 eV depending on the Si layer thickness, without evidence for interface-mediated transition seen in earlier work. The ability to detect quantum-confined luminescence seems to arise from the use of ELTRAN SOI wafers, from suppressed interface state luminescence by high-temperature oxidation and, possibly, from interface matching by crystalline silicon oxide. © 2004 American Institute of Physics.
ACCESSION #
12606871

 

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