Effects of high-dose Mn implantation into ZnO grown on sapphire

Heo, Y.W.; Ivill, M.P.; Ip, K.; Norton, D.P.; Pearton, S.J.; Kelly, J.G.; Rairigh, R.; Hebard, A.F.; Steiner, T.
March 2004
Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2292
Academic Journal
ZnO films grown by pulsed-laser deposition on c-plane Al[sub 2]O[sub 3] substrates were annealed at temperatures up to 600 °C to produce n-type carrier concentrations in the range 7.5×10[sup 15]–1.5×10[sup 20] cm[sup -3]. After high-dose (3×10[sup 16] cm[sup -2]) Mn implantation and subsequent annealing at 600 °C, all the films show n-type carrier concentrations in the range 2–5×10[sup 20] cm[sup -3] and room temperature hysteresis in magnetization loops. The saturation magnetization and coercivity of the implanted single-phase films were both strong functions of the initial anneal temperature, suggesting that carrier concentration alone cannot account for the magnetic properties of ZnO:Mn, and that factors such as crystalline quality and residual defects play a role. © 2004 American Institute of Physics.


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