TITLE

Single carrier localization in In[sub x]Ga[sub 1-x]As[sub 1-y]N[sub y] investigated by magnetophotoluminescence

AUTHOR(S)
Polimeni, A.; Masia, F.; Vinattieri, A.; Höger von Högersthal, G. Baldassarri; Capizzi, M.
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2295
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigated the origin of radiative recombination in In[sub x]Ga[sub 1-x]As[sub 1-y]N[sub y]/GaAs quantum wells by photoluminescence (PL) after picosecond excitation and under a magnetic field, B. Continuous wave and time-resolved PL show that at low temperature T localized states are mainly involved in the radiative recombination processes. Most importantly, the shift of the PL peak position induced by B depends dramatically on temperature, being higher at lower T. This result indicates that the PL emission at low temperature is determined by the recombination of loosely bound electron-hole pairs in which one carrier is localized by N-induced potential fluctuations, and the other carrier is delocalized. © 2004 American Institute of Physics.
ACCESSION #
12606868

 

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