Tuning the electrical resistivity of pulsed laser deposited TiSiO[sub x] thin films from highly insulating to conductive behaviors

Brassard, D.; Sarkar, D.K.; El Khakani, M.A.; Ouellet, L.
March 2004
Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2304
Academic Journal
We report on the successful growth of amorphous TiSiO[sub x] thin films by means of pulsed-laser ablation of a TiO[sub 2]/SiO[sub 2] composite target in a high-vacuum chamber. The room-temperature resistivity of the TiSiO[sub x] films is found to decrease by more than 6 orders of magnitude (i.e., from ∼2×10[sup 4] to 10[sup -2] Ω cm) when their substrate deposition temperature (T[sub d]) is increased from 20 to 600 °C. On the other hand, by subjecting these films to a post-deposition annealing at 600 °C in oxygen atmosphere, they become highly insulating with a resistivity level as high as 2×10[sup 10] Ω cm, regardless of the T[sub d] value. The presence of conductive titanium silicide and titanium sub-oxide local phases in the as-deposited TiSiO[sub x] films, as revealed by photoelectron spectroscopy analyses, appears to be the cause of the observed tremendous change in the film resistivity. In particular, it is shown that the resistivity of the TiSiO[sub x] films is strongly correlated with their oxygen content. © 2004 American Institute of Physics.


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