TITLE

Mn-implanted dilute magnetic semiconductor InP:Mn

AUTHOR(S)
Yoon Shon, N.; Lee, W.C.; Park, Y.S.; Kwon, Y.H.; Seung Joo Lee, Y.H.; Chung, K.J.; Kim, H.S.; Kim, D.Y.; Fu, D.J.; Kang, T.W.; Fan, X.J.; Park, Y.J.; Oh, H.T.
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2310
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Unintentionally doped bulk InP was prepared by the liquid encapsulated Czochralski method and subsequently implanted with various doses of Mn[sup +]. The properties of Mn[sup +]-implanted InP:Mn were investigated by various measurements. The results of energy dispersive x-ray peaks displayed injected concentrations of Mn of 0.8% and 8.8%, respectively. The results of photoluminescence (PL) measurement showed that optical broad transitions related to Mn appeared near 1.089, 1.144, and 1.185 eV in samples with various doses of Mn[sup +]. It was confirmed that the photoluminescence peaks near 1.089, 1.144, and 1.185 eV were Mn-correlated PL bands by the implantation of Mn. Ferromagnetic hysteresis loops measured at 10 K were observed and the temperature-dependent magnetization showed ferromagnetic behavior around 90 K, which almost agreed with the theoretical prediction (T[sub c]∼70 K). © 2004 American Institute of Physics.
ACCESSION #
12606863

 

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