Mn-implanted dilute magnetic semiconductor InP:Mn

Yoon Shon, N.; Lee, W.C.; Park, Y.S.; Kwon, Y.H.; Seung Joo Lee, Y.H.; Chung, K.J.; Kim, H.S.; Kim, D.Y.; Fu, D.J.; Kang, T.W.; Fan, X.J.; Park, Y.J.; Oh, H.T.
March 2004
Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2310
Academic Journal
Unintentionally doped bulk InP was prepared by the liquid encapsulated Czochralski method and subsequently implanted with various doses of Mn[sup +]. The properties of Mn[sup +]-implanted InP:Mn were investigated by various measurements. The results of energy dispersive x-ray peaks displayed injected concentrations of Mn of 0.8% and 8.8%, respectively. The results of photoluminescence (PL) measurement showed that optical broad transitions related to Mn appeared near 1.089, 1.144, and 1.185 eV in samples with various doses of Mn[sup +]. It was confirmed that the photoluminescence peaks near 1.089, 1.144, and 1.185 eV were Mn-correlated PL bands by the implantation of Mn. Ferromagnetic hysteresis loops measured at 10 K were observed and the temperature-dependent magnetization showed ferromagnetic behavior around 90 K, which almost agreed with the theoretical prediction (T[sub c]∼70 K). © 2004 American Institute of Physics.


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