TITLE

Current conduction processes in high-κ Gd[sub 0.31]Ga[sub 0.1]O[sub 0.59]/Ga[sub 2]O[sub 3] gate dielectric stacks on GaAs

AUTHOR(S)
Chen, A.; Passlack, M.; Medendorp, N.; Braddock, D.
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2325
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Current conduction processes in high-κ (κ=20.2) Gd[sub 0.31]Ga[sub 0.1]O[sub 0.59]/Ga[sub 2]O[sub 3] dielectric stacks grown on n-type GaAs by molecular beam epitaxy have been investigated. Metal-oxide-semiconductor capacitors have been characterized by current density (j) versus electric field (E) measurements at temperatures ranging from 90 to 450 K. For temperatures T≤200 K, the high field (4.5≤E≤6.2 MV/cm) current is temperature independent and a Fowler–Nordheim tunneling slope of 1.75 eV[sup 3/2] is obtained. Frenkel–Poole emission is found to dominate at temperatures of 300 K and above at moderate electric fields (1.3≤E≤2.2 MV/cm). For Frenkel–Poole emission, a barrier height of 1.1 eV and a dynamic dielectric constant of 7.95 is derived from ln(j/E) vs 1/T and ln(j/E) vs E[sup 1/2] plots, respectively. © 2004 American Institute of Physics.
ACCESSION #
12606858

 

Related Articles

  • Self-limiting deposition of Ga on a GaAs surface by thermal decomposition of diethylgalliumchloride observed by x-ray photoelectron spectroscopy. Ohno, H.; Ishii, H.; Matsuzaki, K.; Hasegawa, H. // Applied Physics Letters;3/20/1989, Vol. 54 Issue 12, p1124 

    Clean surfaces of molecular beam epitaxially grown GaAs were exposed to diethylgalliumchloride (DEGaCl) and the resultant change was observed by in situ x-ray photoelectron spectroscopy. At a substrate temperature of 300 °C, a self-limiting reaction between DEGaCl and the surface resulted in...

  • Growth of self-organized GaSb islands on a GaAs surface by molecular beam epitaxy. Wang, T.; Forchel, A. // Journal of Applied Physics;3/1/1999, Vol. 85 Issue 5, p2591 

    Presents information on a study which investigated the growth of self-organized GaSb islands on a gallium arsenide surface using molecular beam epitaxy technique. Experimental details; Results and discussion; Conclusions.

  • Strain relaxation of GaN...As... on GaAs (001) grown by molecular-beam epitaxy. Pan, Z.; Wang, Y.T. // Journal of Applied Physics;11/1/1999, Vol. 86 Issue 9, p5302 

    Focuses on a study which determined the strain relaxation of gallium (Ga) nitrogen (N) arsenide (As) layers on GaAS grown by molecular-beam epitaxy. Experimental procedure; Results and discussion; Summary.

  • Interband optical properties of molecular-beam epitaxially grown GaAs...Sb... on GaAs substrates. Ferrini, R.; Franchi, S. // Journal of Applied Physics;10/15/1999, Vol. 86 Issue 8, p4706 

    Features a study on the interband optical response and properties at room temperature of epitaxial gallium (Ga) arsenic antimonide (Sb) layers grown by molecular-beam epitaxy on GaAs substrates. Use of spectroscopic ellipsometry and photoreflectance; Experimental procedure; Results and...

  • Understanding and controlling heteroepitaxy with the kinetic Wulff plot: A case study with GaN. Sun, Qian; Yerino, Christopher D.; Leung, Benjamin; Han, Jung; Coltrin, Michael E. // Journal of Applied Physics;Sep2011, Vol. 110 Issue 5, p053517 

    This work represents a comprehensive attempt to correlate the heteroepitaxial dynamics in experiments with fundamental principles in crystal growth using the kinetic Wulff plot (or v-plot). Selective area growth is employed to monitor the advances of convex and concave facets toward the...

  • In situ fabricated Ga[sub 2]O[sub 3]-GaAs structures with low interface recombination velocity. Passlack, M.; Hong, M. // Applied Physics Letters;1/30/1995, Vol. 66 Issue 5, p625 

    Examines the deposition of amorphous Ga[sub 2]O[sub 3] dielectric films on (100) gallium arsenide (GaAs) layers grown by molecular beam epitaxy in ultrahigh vacuum. Use of transmission electron microscopy; Stability of the Ga[sub 2]O[sub 3]-GaAs interface during photoluminescence; Details on...

  • Esfuerzos Biaxial y de Aleación en Capas de GaAsN Crecidas por Epitaxia de Haces Moleculares. Pulzara, A.; Guajardo, C. Falcony; Aguilar Frutis, M. A.; López, M. López // Revista Colombiana de Física;2008, Vol. 40 Issue 1, p40 

    The dielectric properties of the pseudomorphic GaAsN layers were analyzed from phase modulated ellipsometry (PME) measurements. The GaAsN layers were grown on GaAs (100) by molecular beam epitaxy (MBE). We employ Adashi's critical point model for the parametrization of the imaginary part of the...

  • Band alignment in GaInNP/GaAs heterostructures grown by gas-source molecular-beam epitaxy. Izadifard, M.; Mtchedlidze, T.; Vorona, I.; Chen, W. M.; Buyanova, I. A.; Hong, Y. G.; Tu, C. W. // Applied Physics Letters;6/27/2005, Vol. 86 Issue 26, p261904 

    Low-temperature photoluminescence (PL), PL excitation, and optically detected cyclotron resonance measurements are employed to determine band alignment in GaInNP/GaAs heterostructures grown by gas-source molecular-beam epitaxy. The type II band alignment at the Ga0.46In0.54NxP1-x/GaAs interface...

  • Nitrogen incorporation and optical studies of GaAsSbN/GaAs single quantum well heterostructures. Nunna, Kalyan; Iyer, S.; Wu, L.; Li, J.; Bharatan, S.; Wei, X.; Senger, R. T.; Bajaj, K. K. // Journal of Applied Physics;9/1/2007, Vol. 102 Issue 5, p053106 

    In this work, the effects of N incorporation on the optical properties of GaAsSbN/GaAs single quantum wells (SQWs) have been investigated using temperature, excitation, and magnetic dependencies of photoluminescence (PL) characteristics. These layers were grown in an elemental solid source...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics