Current conduction processes in high-κ Gd[sub 0.31]Ga[sub 0.1]O[sub 0.59]/Ga[sub 2]O[sub 3] gate dielectric stacks on GaAs

Chen, A.; Passlack, M.; Medendorp, N.; Braddock, D.
March 2004
Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2325
Academic Journal
Current conduction processes in high-κ (κ=20.2) Gd[sub 0.31]Ga[sub 0.1]O[sub 0.59]/Ga[sub 2]O[sub 3] dielectric stacks grown on n-type GaAs by molecular beam epitaxy have been investigated. Metal-oxide-semiconductor capacitors have been characterized by current density (j) versus electric field (E) measurements at temperatures ranging from 90 to 450 K. For temperatures T≤200 K, the high field (4.5≤E≤6.2 MV/cm) current is temperature independent and a Fowler–Nordheim tunneling slope of 1.75 eV[sup 3/2] is obtained. Frenkel–Poole emission is found to dominate at temperatures of 300 K and above at moderate electric fields (1.3≤E≤2.2 MV/cm). For Frenkel–Poole emission, a barrier height of 1.1 eV and a dynamic dielectric constant of 7.95 is derived from ln(j/E) vs 1/T and ln(j/E) vs E[sup 1/2] plots, respectively. © 2004 American Institute of Physics.


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