TITLE

Thickness-dependent metal–insulator transition in V[sub 2]O[sub 3] ultrathin films

AUTHOR(S)
Qiang Luo; Qinlin Guo, M.S.; Wang, E.G.
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2337
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this study, V[sub 2]O[sub 3] ultrathin films about 5–20 nm thick were prepared on Al[sub 2]O[sub 3] (0001) substrates through a reactive evaporation process. Auger electron spectroscopy and x-ray photoelectron spectroscopy have been used in situ to characterize their compositions and chemical states. Electric resistance measurements show that V[sub 2]O[sub 3] films transform from metallic to semiconducting with the decrease of film thickness, which results from the a[sub 1g] level rising because the lattice mismatch between the substrate and the film expands the c/a parameter ratio. No temperature-induced metal–insulator transition (like that in bulk V[sub 2]O[sub 3]) was observed in V[sub 2]O[sub 3] thin films at low temperature. We conclude that stress plays a major role in suppressing the temperature-induced metal–insulator transition. © 2004 American Institute of Physics.
ACCESSION #
12606854

 

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