Thickness-dependent metal–insulator transition in V[sub 2]O[sub 3] ultrathin films

Qiang Luo; Qinlin Guo, M.S.; Wang, E.G.
March 2004
Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2337
Academic Journal
In this study, V[sub 2]O[sub 3] ultrathin films about 5–20 nm thick were prepared on Al[sub 2]O[sub 3] (0001) substrates through a reactive evaporation process. Auger electron spectroscopy and x-ray photoelectron spectroscopy have been used in situ to characterize their compositions and chemical states. Electric resistance measurements show that V[sub 2]O[sub 3] films transform from metallic to semiconducting with the decrease of film thickness, which results from the a[sub 1g] level rising because the lattice mismatch between the substrate and the film expands the c/a parameter ratio. No temperature-induced metal–insulator transition (like that in bulk V[sub 2]O[sub 3]) was observed in V[sub 2]O[sub 3] thin films at low temperature. We conclude that stress plays a major role in suppressing the temperature-induced metal–insulator transition. © 2004 American Institute of Physics.


Related Articles

  • Femtosecond laser diagnostics of thin films, surfaces and interfaces. Scheidt, T.; Rohwer, E. G.; v. Bergmann, H. M.; Stafast, H. // South African Journal of Science;May/Jun2005, Vol. 101 Issue 5/6, p267 

    An overview is given of optical second harmonic generation (SHG) using femtosecond laser pulses to analyse technologically important crystalline materials. The principle of SHG is briefly explained and a typical experimental setup for SHG is outlined. The second harmonic (SH) measurements...

  • Metal-Insulator-Semiconductor (MIS) Structure with AlN Dielectric. Mahyuddin, A.; Hassan, Z.; Cheong, K. Y. // AIP Conference Proceedings;6/1/2009, Vol. 1136 Issue 1, p494 

    In this paper, we present the study of the structural and electrical properties of AlN/GaN thin films grown on Si (111) substrates by plasma-assisted molecular beam epitaxy (RF-MBE) with AlN buffer layer. The performance of aluminum nitride (AlN) as insulator and aluminum (Al) contacts is...

  • Effect of Temperature Cycling on Conduction Mechanisms in CdTe Thin Films. Srivastav, V.; Pal, R.; Saini, N.; Saxena, R.; Bhan, R.; Sareen, L.; Singh, K.; Sharma, R.; Venkataraman, V. // Journal of Electronic Materials;Mar2013, Vol. 42 Issue 3, p389 

    CdTe thin films of 500 Ã… thickness prepared by thermal evaporation technique were analyzed for leakage current and conduction mechanisms. Metal-insulator-metal (MIM) capacitors were fabricated using these films as a dielectric. These films have many possible applications, such as passivation...

  • Giant resistance switching against thermal cycling in twinned La0.65Ca0.35MnO3 films. Park, J. S.; Lee, H. K.; Bae, H. R.; Lee, Y. P.; Prokhorov, V. G. // Journal of Applied Physics;6/1/2004, Vol. 95 Issue 11, p7100 

    The magnetic and transport properties of La0.65Ca0.35MnO3 film grown on LaAlO3 (001) twinned crystal were investigated in a temperature range of 77–300 K. A decrease in transport current in a temperature range below the metal–insulator–transition temperature can be ascribed...

  • Some notes on the metal-insulator-semiconductor conductance technique. Plucinski, K.J. // Applied Physics Letters;10/26/1992, Vol. 61 Issue 17, p2087 

    Examines the small-signal approximations forming the basis of the theory of the metal-insulator-semiconductor conductance technique. Influence of the approximations on the conductance measurements; Basic step in the conductance technique; Results of the low temperature conductance measurements...

  • Size-dependent optical properties of sputter-deposited nanocrystalline p-type transparent CuAlO2 thin films. Banerjee, A. N.; Chattopadhyay, K. K. // Journal of Applied Physics;4/15/2005, Vol. 97 Issue 8, p084308 

    Nanocrystalline, p-type semiconducting, transparent CuAlO2 thin films were deposited by direct current sputtering of a prefabricated polycrystalline CuAlO2 target, with deposition time as a variable parameter. Transmission electron micrographs reveal the formation of CuAlO2 nanoparticles. For...

  • Compound formation at the interaction of Pd with strained layers of Si[sub 1 - x]Ge[sub x].... Buxbaum, A.; Eizenberg, M.; Raizman, A.; Schaffler, F. // Applied Physics Letters;8/5/1991, Vol. 59 Issue 6, p665 

    Examines the reaction products in the palladium (Pd) metallized single crystalline silicon germide/silicon system. Documentation of Pd thin films with single crystalline silicon interaction; Formation of the orthorhombic PdGe phase; Isomorphous structures of germanide phases with the...

  • Electrical transport properties of ferromagnetic GaxCr1-xN thin films. Wu, Stephen Y.; Newman, N. // Applied Physics Letters;10/2/2006, Vol. 89 Issue 14, p142105 

    The authors report the transport properties of ferromagnetic Ga0.97Cr0.03N films with a Curie temperature of over 900 K. Samples synthesized under conditions that produce the maximum occupancy of Cr atoms on the Ga site (∼90%) and the maximum ferromagnetic moment of ∼0.6μB/Cr (775...

  • Andreev Reflections in Micrometer-Scale Normal Metal-Insulator-Superconductor Tunnel Junctions. Lowell, Peter; O'Neil, Galen; Underwood, Jason; Ullom, Joel // Journal of Low Temperature Physics;May2012, Vol. 167 Issue 3/4, p392 

    Understanding the subgap behavior of Normal metal-Insulator-Superconductor (NIS) tunnel junctions is important in order to be able to accurately model the thermal properties of the junctions. Hekking and Nazarov (Phys. Rev. B 49:6847, ) developed a theory in which NIS subgap current in thin-film...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics