TITLE

Electrical characterization of phosphorus-doped n-type homoepitaxial diamond layers by Schottky barrier diodes

AUTHOR(S)
Suzuki, Mariko; Yoshida, Hiroaki; Sakuma, Naoshi; Ono, Tomio; Sakai, Tadashi; Koizumi, Satoshi
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2349
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Temperature-dependent current–voltage (I–V), capacitance–voltage (C–V) measurements, and frequency-dependent C–V measurements have been carried out to investigate electrical properties of phosphorus (P)-doped n-type homoepitaxial diamond layers. We have fabricated lateral dot-and-plane (with ring-shaped-gap) Schottky barrier diodes. Frequency-dependent capacitance measurements revealed the existence of a deep donor level. C–V measurements deduced that the net donor concentration was 6.2×10[sup 17] cm[sup -3] and the corresponding built-in potential was 4.0 eV, when the P concentration was 8.3×10[sup 17] cm[sup -3]. Phosphorus electrical activity was 0.75 in the P-doped diamond layer. The carrier thermal activation energy (the donor level) was evaluated to be 0.6 eV from the relation between the net donor concentration and the carrier concentration. © 2004 American Institute of Physics.
ACCESSION #
12606850

 

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